The development of the 1.27 μm high responsivity AlInAs avalanche photodiodes for 10G-EPON (OLT)
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan04/2010; pp.1 - 3 In proceeding of: Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Source: IEEE Xplore
ABSTRACT We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.