Conference Proceeding

The development of the 1.27 μm high responsivity AlInAs avalanche photodiodes for 10G-EPON (OLT)

High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
04/2010; pp.1 - 3 In proceeding of: Optical Fiber Communication (OFC), collocated National Fiber Optic Engineers Conference, 2010 Conference on (OFC/NFOEC)
Source: IEEE Xplore

ABSTRACT We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).

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Keywords

multiplication factor
 
OLT
 
μm AlInAs APD