Article

Temperature-Dependent Study on Modal Gain and Differential Gain of 1.3- m InAs–GaAs QD Lasers With Different -Doping Levels

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
IEEE Photonics Technology Letters (impact factor: 2.19). 08/2010; DOI:10.1109/LPT.2010.2049485 pp.1045 - 1047
Source: IEEE Xplore

ABSTRACT The modal gain and differential gain of 1.3-μm InAs-GaAs quantum-dot (QD) lasers with different doping concentrations have been investigated as a function of injection current under different operation temperatures from 20°C to 120°C. The results show that QD laser with light doping density can improve the characteristic temperature (To), modal gain, and differential gain and reduce the threshold current density.

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Keywords

1.3-μm InAs-GaAs quantum-dot
 
characteristic temperature
 
concentrations
 
different
 
different operation temperatures
 
differential gain
 
injection current
 
QD laser
 
threshold current density
 

Rui Wang