Article

The Semi-Superjunction IGBT

Dept. of Electr. Eng., Univ. of Cambridge, Cambridge, UK
IEEE Electron Device Letters (impact factor: 2.85). 07/2010; DOI:10.1109/LED.2010.2046132 pp.591 - 593
Source: IEEE Xplore

ABSTRACT In this letter, we propose a new device, the Semi-Superjunction (SJ) (Semi-SJ) insulated-gate bipolar transistor (IGBT) (Semi-SJ IGBT). The device offers significant improvement in the on state and switching tradeoff compared with the state-of-the-art FieldStop Trench IGBT (FS IGBT). Furthermore, when compared with a full SJ IGBT, the device has a considerably simpler process of manufacturing as the existing fabrication process for the “CoolMOS” could be used. The Semi-SJ IGBT offers better robustness against cosmic rays compared with an FS IGBT; the failure-in-time per surface area (FIT/A) of the device levels are up to two orders of magnitude lower. Alternatively, by changing the structure parameters, one can improve dramatically the on state versus switching tradeoff while maintaining the same FIT/A levels.

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Keywords

cosmic rays
 
existing fabrication process
 
failure-in-time
 
FIT/A
 
FIT/A levels
 
FS IGBT
 
full SJ IGBT
 
IGBT
 
magnitude lower
 
new device
 
Semi-SJ
 
Semi-SJ IGBT
 
state-of-the-art FieldStop Trench IGBT
 
structure parameters
 
switching tradeoff
 

M. Antoniou