Article

Transition-Voltage Method for Estimating Contact Resistance in Organic Thin-Film Transistors

Jiangsu Key Lab. for Carbon-Based Functional Mater. & Devices, Soochow Univ., Suzhou, China
IEEE Electron Device Letters (impact factor: 2.85). 06/2010; DOI:10.1109/LED.2010.2044137 pp.509 - 511
Source: IEEE Xplore

ABSTRACT We report a simple method for evaluating the contact resistance ( R C) in organic thin-film transistors, utilizing the measurement of the transition voltage between the linear and saturation regimes in the output characteristics. This method does not need the complex electrode patterning, and thus, it could be useful for the practical R C test. The R C extracted from the transition-voltage method shows a decrease with increasing gate voltage, and the results are similar with those extracted from the transfer-line method, indicating the preciseness of the proposed transition-voltage method.

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Keywords

complex electrode patterning
 
decrease
 
linear
 
organic thin-film transistors
 
output characteristics
 
practical R <sub>C</sub> test
 
proposed transition-voltage method
 
transition-voltage method
 

S. D. Wang