High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 μm
ABSTRACT A 1.2 μm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ~80 nm bandwidth.
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ABSTRACT: a b s t r a c t We report on the fabrication of superluminescent diodes (SLD) from a graded bandgap quantum well intermixed (QWI) material obtained by an infrared laser rapid thermal annealing (IR Laser-RTA) technique. The processed semiconductor wafer consisted of an InGaAs/InGaAsP/InP (001) QW laser heterostructure originally emitting at 1.55 μm. The combined beams of a 150 W laser diode operating at 980 nm and a 30 W Nd:YAG laser operating at 1064 nm are used to heat the sample. While the laser diode is used for back-side heating of the wafer, the Nd:YAG laser beam is swept along the sample surface, resulting in temperature gradient changing in the direction perpendicular to the scan. This contactless RTA approach, allowed to obtain a graded bandgap material that was employed for the fabrication of SLD devices with a broadened emission bandwidth. The lasing effect in a series of 3 mm long broad area injection diodes was suppressed by tilting their facets by 7.51 with respect to the  direction. The best SLD devices had their FWHM (full-width-at-half-maximum) emission increased by 33% in comparison to the FWHM of 36 nm observed for devices made from the as grown material at an equal output power of 0.8 mW.
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ABSTRACT: The current state of the field of semiconductor lasers operating in the spectral range near 1.3 μm and with an active region represented by an array of self-organized quantum dots is reviewed. The threshold and temperature characteristics of such lasers are considered; the problems of overcoming the gain saturation and of an increase in both the differential efficiency and emitted power are discussed. Data on the response speed under conditions of direct modulation and on the characteristics of lasers operating with mode synchronization are generalized. Nonlinear gain saturation, the factor of spectral line broadening, and the formation of broad gain and lasing spectra are discussed.Semiconductors 46(10). · 0.60 Impact Factor