High performance intermixed p-doped quantum dot superluminescent diodes at 1.2 μm

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Electronics Letters (Impact Factor: 1.07). 03/2010; DOI: 10.1049/el.2010.3550
Source: IEEE Xplore

ABSTRACT A 1.2 μm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ~80 nm bandwidth.

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