Conference Proceeding

# Analytical high frequency channel thermal noise modeling in deep sub-micron MOSFETs

Centre for Integrated Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore
01/2010; pp.306 - 309 In proceeding of: Integrated Circuits, ISIC '09. Proceedings of the 2009 12th International Symposium on
Source: IEEE Xplore

ABSTRACT A simple high frequency channel thermal noise model was developed for MOSFETs in strong inversion region. Short channel effects such as channel length modulation effect and mobility degradation due to vertical field were taken into account in the current-voltage model and channel thermal noise model. It was found that the long channel Tsividis' noise model is still valid for short channel devices by including the proposed effective mobility model and the channel length modulation effect. Good agreement has been obtained between the simulated and measured results across different frequencies, gate biases and drain biases.

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30 Apr 2013

### Keywords

biases

channel length modulation effect

channel thermal noise model

channel Tsividis' noise model

different frequencies

gate biases

proposed effective mobility model

simple

simulated

strong inversion region