Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

QUALCOMM MEMS Technologies, 2581 Junction Avenue, San Jose, California 95134, USA
Ibm Journal of Research and Development (Impact Factor: 0.5). 08/2006; DOI: 10.1147/rd.504.0387
Source: IEEE Xplore

ABSTRACT The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed.