A 60–110 GHz low conversion loss tripler in 0.15-µm MHEMT process
ABSTRACT A 60-110 GHz low conversion loss tripler in a 0.15-μm InGaAs metamorphic high electron-mobility transistor (MHEMT) technology is presented in this paper. The tripler employs a configuration of an anti-parallel diode pair to produce the third harmonic signal. Between 60 and 110 GHz, this tripler features a conversion loss of less than 20 dB with an input power of 15 dBm. The minimum conversion loss is 13 dB at 81 GHz with an output power of 3 dBm. The output 1-dB compression point (P1dB) is higher than 3 dBm among the operating bandwidth. The output power is higher than 4 dBm while the driving power is 20 dBm. The overall chip size is 1Ã1 mm2. To the best of the author's knowledge, this is the highest output power MMIC-based diode tripler to cover the entire E- and W-band without dc power consumption.
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ABSTRACT: Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, end the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with a focus on work done at Raytheon RF ComponentsIndium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on; 02/2000
Conference Proceeding: A W-band GCPW MMIC Diode Tripler[show abstract] [hide abstract]
ABSTRACT: A W-band GCPW (grounded coplanar waveguide) MMIC diode tripler using GaAs PHEMT process is developed. An anti-parallel diode pair is used to produce third harmonic signal and a GCPW band pass filter is used to reject the spurious signal. The measured conversion loss is 18-20 dB from 87 to 102 GHz at 14-dBm input power. It is observed that if the filter were taken out, this tripler could be improved more than 5-dB in conversion loss without significant affecting in rejection performance. In this case, the chip could be reduced at least by half to a miniature size, that is, from 1.5 x 1 mm2 to about 0.8 x 0.8 mm2.Microwave Conference, 2002. 32nd European; 10/2002
Conference Proceeding: Differential VCO and frequency tripler using SiGe HBTs for the 24 GHz ISM band[show abstract] [hide abstract]
ABSTRACT: A frequency source generator chip was designed and built in a commercial SiGe process for an integrated front-end transceiver operating in the 24 GHz ISM band. It consists of a negative resistance cross-coupled differential VCO, oscillating at 8 GHz with a 150 MHz tuning range, having an output power of 0 dBm and a phase noise of -90 dBc/Hz at 100 kHz offset. The VCO drives a differential amplifier used as a frequency tripler which results in an overall voltage control frequency source operating at a nominal frequency of 23.5 GHz with a 420 MHz tuning range. It has a -10 dBm output power and consumes 180 mW. Its phase noise is -80 dBc/Hz at 100 kHz. The total chip area measures 600 × 300 μm<sup>2</sup>.Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE; 07/2003