Conference Paper

Overview of FDSOI technology from substrate to device

SOITEC, Parc Technol. des Fontaines, Crolles, France
DOI: 10.1109/ISDRS.2009.5378173 Conference: Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Source: IEEE Xplore

ABSTRACT To meet low power circuit requirements, increased channel mobility is required to boost transistor performance and reduce Vdd for lower power dissipation without performance penalty. SOI and more advanced engineered substrates developed on the SOI platform provide solutions for 32 technology nodes and beyond. The options include process-induced strain, biaxial strain virtual substrates, modification of surface and channel orientation, or selection of channel materials with high mobility and high saturation velocities such as Ge, SiGe alloys, and III/V compound semiconductors. The ultra-thin-body SOI devices with undoped and strained channels can be used to control the SCE and reduce the sub-threshold leakage for scaling and low power dissipation. Such fully depleted devices promise excellent performance, high circuit density at very low power, a critically important attribute for the rapidly growing realm of portable consumer electronics like smart phone and mobile internet device. In addition, SOI enables some unique applications that would be very difficult if not impossible in bulk Si, such as RF devices in high resistivity substrates, ultra-thin RFID chips, backside imagers, MEMS, photonic integrated circuits, and flexible electronics.

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