Article

Advanced silicon processing for active planar photonic devices

Thomas J. Watson Laboratory, California Institute of Technology, 1200 E. California Blvd., Pasadena, California 91125
Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society (Impact Factor: 1.36). 12/2009; DOI: 10.1116/1.3256649
Source: IEEE Xplore

ABSTRACT Using high quality, anisotropically etched Si waveguides bonded to InGaAsP, the authors demonstrate a hybrid laser, whose optical profile overlaps both Si and III-V regions. Continuous wave laser operation was obtained up to 45 ° C , with single facet power as high as 12.7 mW at 15 ° C . Planar Si optical resonators with Q=4.8×106 are also demonstrated. By using a S F 6/ C 4 F 8 reactive ion etch, followed by H 2 S O 4/ H F surface treatment and oxygen plasma oxide, the optical losses due to the waveguide and the bonding interface are minimized. Changes of optical confinement in the silicon are observed due to waveguide width variation.

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    ABSTRACT: The integration of thin film edge emitting lasers onto silicon enables the realization of planar photonic structures for interconnection and for miniaturized optical systems that can be integrated in their entirety at the chip scale. These thin film emitters are compound semiconductor lasers that are optimized for operation without the growth substrate. Removal of the laser growth substrate, coupled with bonding to the silicon host substrate, enable the integration of high quality edge emitting lasers with silicon. This paper explores the challenges, approaches, fabrication processes, and progress in the integration of thin film edge emitting lasers integrated onto silicon.
    Proc SPIE 02/2010;

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