Low voltage mach-zehnder modulator with InGaAs/InAlAs five layer asymmetric coupled quantum wells
Grad. Sch. of Eng., Yokohama Nat. Univ, Yokohama, JapanConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 11/2009; DOI:10.1109/LEOS.2009.5343208 pp.434 - 435 In proceeding of: LEOS Annual Meeting Conference Proceedings, 2009. LEOS '09. IEEE
Source: IEEE Xplore
ABSTRACT Modulation characteristics of FACQW MZ modulator grown by MBE were published. For a device with a 0.5-mm phase shifter and Y branches, the half-wave voltage of 2.3 V (VpiL = 1.2 Vmm) was successfully obtained.
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