Conference Proceeding

Electrical modeling of annular and co-axial TSVs considering MOS capacitance effects

11/2009; DOI:10.1109/EPEPS.2009.5338462 In proceeding of: Electrical Performance of Electronic Packaging and Systems, 2009. EPEPS '09. IEEE 18th Conference on
Source: IEEE Xplore

ABSTRACT This paper presents analytical modeling and parametric study of the voltage dependent metal-oxide-semiconductor (MOS) capacitance of annular and co-axial TSVs. 3D electromagnetic (EM) simulations of TSVs are performed considering the depletion region. A low loss TSV structure is proposed utilizing the MOS capacitance effect.

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Keywords

3D electromagnetic
 
co-axial TSVs
 
depletion region
 
low loss TSV structure
 
paper presents analytical modeling
 
TSVs
 
voltage dependent metal-oxide-semiconductor