Article

Single exciton emission from gate-defined quantum dots

04/2012;
Source: arXiv

ABSTRACT With gate-defined electrostatic traps fabricated on a double quantum well we
are able to realize an optically active and voltage-tunable quantum dot
confining individual, long-living, spatially indirect excitons. We study the
transition from multi excitons down to a single indirect exciton. In the few
exciton regime, we observe discrete emission lines reflecting the interplay of
dipolar interexcitonic repulsion and spatial quantization. The quantum dot
states are tunable by gate voltage and employing a magnetic field results in a
diamagnetic shift. The scheme introduces a new gate-defined platform for
creating and controlling optically active quantum dots and opens the route to
lithographically defined coupled quantum dot arrays with tunable in-plane
coupling and voltage-controlled optical properties of single charge and spin
states.

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Keywords

diamagnetic shift
 
double quantum
 
exciton regime
 
gate voltage
 
gate-defined electrostatic traps fabricated
 
interplay
 
magnetic field results
 
new gate-defined platform
 
optically active
 
optically active quantum dots
 
quantum dot arrays
 
scheme introduces
 
spatial quantization
 
spatially indirect excitons
 
voltage-controlled optical properties
 
voltage-tunable quantum dot