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Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

A. Lo Giudice
A. Lo Giudice
Institute for Experimental Physics, University of Hamburg, Germany; Department of Physics, University of Exeter, Exeter, EX4 4QL, UK; Department of Physics & Astronomy, Glasgow University, Glasgow, UK; Physics Department/Physical Electronics, University of Oslo, Oslo, Norway; Department of Physics, University of Liverpool, UK; Experimental Particle Physics Group, Syracuse University, Syracuse, USA; Université catholique de Louvain, Institut de Physique Nucléaire, Louvain-la-Neuve, Belgium; SINTEF ICT P.O. Box 124 Blindern N-0314 Oslo, Norway; Institute for Nuclear Research of the Academy of Sciences of Ukraine, Radiation Physics Departments; Institute of Physics PAS and Institute of Electronics Technology, Warszawa, Poland; I.N.F.N. and Università di Perugia—Italy; Dipartimento di Fisica and INFN Sezione di Padova, Via Marzolo 8, I-35131, Padova, Italy; University of Rochester; Purdue University, USA; State Scientific Center of Russian Federation, Institute for Theoretical and Experimental Physics, Moscow, Russia; INFN Florence—Department of Energetics, University of Florence, Italy; Universita` di Pisa and INFN sez. di Pisa, Italy; ITC-IRST, Microsystems Division, Povo, Trento, Italy; Universita di Trieste & I.N.F.N.-Sezione di Trieste, Italy; Department of Physics, Lancaster University, Lancaster, UK; Charles University Prague, Czech Republic; Institute of Electronic Materials Technology, Warszawa, Poland; National Institute for Materials Physics, Bucharest—Magurele, Romania; Centro Nacional de Microelectrónica (IMB-CNM, CSIC); Department of Physics, University of Bologna, Bologna, Italy; Groupe de la Physique des Particules, Université de Montreal, Canada; Czech Technical University in Prague, Czech Republic; Jožef Stefan Institute and Department of Physics, University of Ljubljana, Ljubljana, Slovenia; CERN, Geneva, Switzerland; Fermilab, USA; Dipartimento Interateneo di Fisica & INFN—Bari, Italy; Department of Physics and Astronomy, University of Sheffield, Sheffield, UK; University of Karlsruhe, Institut fuer Experimentelle Kernphysik, Karlsruhe, Germany; Ioffe Phisico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia; Experimental Physics Department, University of Torino, Italy; IFIC Valencia, Apartado 22085, 46071 Valencia, Spain; Institute of Materials Science and Applied Research, Vilnius University, Vilnius, Lithuania; Universitaet Dortmund, Lehrstuhl Experimentelle Physik IV, Dortmund, Germany; University of New Mexico; Santa Cruz Institute for Particle Physics; Tel Aviv University, Israel; Helsinki Institute of Physics, Helsinki, Finland; Laboratory for Particle Physics, Paul Scherrer Institut, Villigen, Switzerland; Institut für Kristallzüchtung, Berlin, Germany; Brookhaven National Laboratory, Upton, NY, USA; Department of Electrical Engineering, Lappeenranta University of Technology, Lappeenranta, Finland; Faculty of Physics, University of Bucharest; Belarusian State University, Minsk; Rutgers University, Piscataway, New Jersey, USA; Institute of Physics, Academy of Sciences of the Czech Republic, Praha, Czech Republic; CiS Institut für Mikrosensorik gGmbH, Erfurt, Germany; Department of Physics, University of Surrey, Guildford, UK
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (Impact Factor: 1.14). 05/2005; 552:7-19. DOI: 10.1016/j.nima.2005.05.039

ABSTRACT The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Further, with 3D, Semi-3D and thin devices new detector concepts have been evaluated. These and other recent advancements of the RD50 collaboration are presented and discussed.

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