Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch

Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh-173234, India; VLSI Design Group, Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan-333031, India
Microelectronics Journal 01/2011; DOI: 10.1016/j.mejo.2010.12.007
Source: DBLP

ABSTRACT In this paper, we have designed a double-gate MOSFET and compared its performance parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems. A double-gate radio-frequency complementary metal-oxide-semiconductor (DG RF CMOS) switch operating at the frequency of microwave range is investigated. This RF switch is capable to select the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements (such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, and switching speed) required for the integrated circuit of the radio frequency sub-system of the DG RF CMOS switch and the role of these basic circuit elements are also discussed. These properties presented in the switches due to the double-gate MOSFET and single-gate MOSFET have been discussed.

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