Article

Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch

Department of Electronics and Communication Engineering, Jaypee University of Information Technology, Waknaghat, Solan, Himachal Pradesh-173234, India; VLSI Design Group, Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan-333031, India
Microelectronics Journal 01/2011; DOI: 10.1016/j.mejo.2010.12.007
Source: DBLP

ABSTRACT In this paper, we have designed a double-gate MOSFET and compared its performance parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems. A double-gate radio-frequency complementary metal-oxide-semiconductor (DG RF CMOS) switch operating at the frequency of microwave range is investigated. This RF switch is capable to select the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements (such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, and switching speed) required for the integrated circuit of the radio frequency sub-system of the DG RF CMOS switch and the role of these basic circuit elements are also discussed. These properties presented in the switches due to the double-gate MOSFET and single-gate MOSFET have been discussed.

0 Bookmarks
 · 
238 Views
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with DIBL and SCE, for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET.
    Procedia Engineering. 38:517–521.
  • [Show abstract] [Hide abstract]
    ABSTRACT: Using the technique of martingale transforms, the relation between Hardy–Orlicz spaces of the martingales with predictable quadratic variations is investigated. Let Φ1Φ1 and Φ2Φ2 be two Young functions and Φ1≺Φ2Φ1≺Φ2 in some sense, a constructive proof is obtained that the elements in the Hardy–Orlicz space QΦ1QΦ1 are none other than the martingale transforms of those in the Hardy–Orlicz space QΦ2QΦ2. The results obtained here extend the corresponding results in the former literature.
    Statistics [?] Probability Letters 08/2011; 81(8):1086–1093. · 0.53 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: Conventional CMOS switch uses NMOS as transistors in its main architecture requiring a control voltage of 5.0 V and a large resistance at the receivers and antennas (ANTs) to detect the signal. A CMOS integrated circuit switch uses FET transistors to achieve switching between multiple paths, because of its high value of control voltage. Hence it is not suitable for modern portable devices which demand lesser power consumption. Therefore, we proposed a new Double-Pole Four-Throw (DP4T) switch by using RF CMOS technology and analyzed its performance. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and area could be reduced as compared to already existing switch configuration as SPDT and Double-Pole Double-Throw (DPDT) transceiver switches, which is simply a reduction of signal strength during transmission of the RF signals. The presented result for the proposed DP4T switch reveals the peak output currents (drain current) around 0.116–0.387 mA and a switching speed of 19–36 ps.
    Journal of Circuits System and Computers 07/2012; 21(04). · 0.24 Impact Factor