Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch
VLSI Design Group, Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan-333031, India Microelectronics Journal
(Impact Factor: 0.84).
03/2011; 42(3):527-534. DOI: 10.1016/j.mejo.2010.12.007
In this paper, we have designed a double-gate MOSFET and compared its performance parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems. A double-gate radio-frequency complementary metal-oxide-semiconductor (DG RF CMOS) switch operating at the frequency of microwave range is investigated. This RF switch is capable to select the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements (such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, and switching speed) required for the integrated circuit of the radio frequency sub-system of the DG RF CMOS switch and the role of these basic circuit elements are also discussed. These properties presented in the switches due to the double-gate MOSFET and single-gate MOSFET have been discussed.
Available from: Ghanshyam Singh
- "Recently, the CMOS transistor uses the technique of silicon-oninsulator (SOI), which is very attractive because of the high speed performance, low power consumption, its scalability and effective potential   . As compared to the bulk silicon substrate, the architecture of SOI MOSFETs is more flexible due to the several parameters such as thicknesses of film and buried oxide, substrate doping as well as back-gate bias, which is used for the optimization and scaling. "
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ABSTRACT: Keywords: Cylindrical surrounding double-gate (CSDG) MOSFET Double-gate (DG) MOSFET Resistive and capacitive MOSFET model Advanced design simulator (ADS) Radio frequency RF switch CMOS switch Cross talk VLSI a b s t r a c t In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems. The proposed CSDG RF MOSFET is operated at the microwave regime of the spectrum. We emphasize on the basics of the circuit elements such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, energy stored, cross talk and switching speed required for the integrated circuit of the radio frequency sub-system of the CSDG RF CMOS device and the physical significance of these basic circuit elements is also discussed. We observed that the total capacitance between the source to drain for the proposed CSDG MOSFET is more compared to the Cylindrical Surrounding Single-Gate (CSSG) MOSFET due to the greater drain current passing area of the CSDG MOSFET, which reveals that the isolation is better in the CSDG MOSFET compared to that of the simple double-gate MOSFET and single-gate MOSFET. We analyzed that the CSDG MOSFET stores more energy (1.4 times) as compared to the CSSG MOSFET. Therefore, the CSDG MOSFET has more stored energy. The ON-resistance of CSDG MOSFET is half than that of the double-gate MOSFET and single-gate MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than the double-gate MOSFET and single-gate MOSFET.
Microelectronics Journal 08/2011; 42(10):1124-1135. DOI:10.1016/j.mejo.2011.07.003 · 0.91 Impact Factor
Available from: Viranjay Srivastava
- "Transistor layout and its wiring effect are considered as one of the crucial issues for gigahertz circuit design, since they directly affect the RF transceiver performance    . Due to the single operating frequency, simple switch has a limited data transfer rate. "
Available from: Neal S Peachey
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ABSTRACT: Phosphenes ("light flashes") have been reported by most astronauts on space missions and by healthy subjects whose eyes were exposed to ionizing radiation in early experiments in particle accelerators. The conditions of occurrence suggested retinal effects of heavy ions. To develop an in vivo animal model, we irradiated the eyes of anesthetized wild-type mice with repeated bursts of 12C ions delivered under controlled conditions in accelerator. 12C ions evoked electrophysiological retinal mass responses and activated the visual system as indicated by responses recorded from the visual cortex. No retinal immunohistological damage was detected. Mice proved a suitable animal model to study radiation-induced phosphenes in vivo and our findings are consistent with an origin of phosphenes in radiation activating the retina.
Neuroscience Letters 05/2007; 416(3):231-5. DOI:10.1016/j.neulet.2006.12.062 · 2.03 Impact Factor
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