Well-aligned ZnO microprism arrays with umbrella-like tips: Low-temperature preparation, structure and UV photoluminescence improvement
ABSTRACT Catalyst-free, low-temperature (430 °C), high-density, well-aligned, single-crystalline zinc oxide (ZnO) microprism (ZMP) arrays have been synthesized over the entire c-ZnO/poly-Zn-coated Si substrates by simple thermal evaporation of Zn powder. Specially, the microprisms obtained possess hexagonal umbrella-like tips on which vertical thin ZnO nanowires grow. The growth mechanism of a three-stage thermodynamic process was discussed. Photoluminescence spectra show a strong ultraviolet (UV) emission enhancement of the ZMPs after H+ (hydrogen ions) implantation. This kind of special ZnO microstructure may find potential applications in field emission, UV laser emission devices, multifunctional microdevices and highly integrated multichannel nano-optoelectronic devices.
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ABSTRACT: Wet oxidation can be used to produce high quality zinc oxide (ZnO) nanostructures at moderately high temperatures with low requirements of equipment and experimental conditions. Zn precursor films were prepared by magnetron sputtering and controlled ZnO nanostructures were produced by oxidation of the Zn precursor films in wet O2. The growth mechanism of the ZnO nanowires and nanobelts in wet oxidation was discussed based on the experimental results. Silver and nitrogen doping were realized in the wet oxidation process, with different techniques. The structural and optical properties of the ZnO nanostructures were characterized by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and photoluminescence (PL) measurements to understand the growth process of ZnO in wet oxidation. The production of ZnO porous films by wet oxidation process is also presented.Progress in Natural Science: Materials International. 04/2011; 21(2):81–96.
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ABSTRACT: ZnO acicular nanostructure was designed and grown from aqueous solution on the conductive substrate. The diameter of ZnO was 50 nm and length was about 5 mum. due to the large aspect ratio, the as-prepare ZnO sample was applied in filed emission with turn-on electric intensity of 3.2 V/mum and enhancement factor beta of 2830.01/2009;