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Combined in-depth scanning Auger microscopy and Raman scattering characterisation of CuInS2 polycrystalline films

Serveis Cientı́fico-Tècnics, Universitat de Barcelona, C/Lluis Solé i Sabarı́s 1-3, E-08028 Barcelona, Spain; EME, Departament d’Electrònica, Unitat Associada CNM-CSIC, Universitat de Barcelona, C/Martı́ i Franqués 1, E-08028 Barcelona, Spain; Hahn Meitner Institute, Glienicker Strasse 100, D-14109 Berlin, Germany
Vacuum (Impact Factor: 1.53). 01/2001; DOI: 10.1016/S0042-207X(01)00207-X

ABSTRACT In this work, the combination of in-depth scanning Auger microscopy with Raman microprobe spectroscopy is applied for the detailed microstructural characterisation of CuInS2 (CIS) thin films. CIS films are used for the fabrication of high efficiency solar cell devices. These films are obtained by sequential sputtering of Cu and In layers on a Mo-coated glass substrate, followed by a sulphurisation step at 500°C in a rapid thermal processing furnace. In order to study this process, samples obtained at intermediate steps are investigated. The obtained data show the formation of the CIS phase already at the first stages of the sulphurisation process, although with a highly disordered structure. Moreover, segregation of CuS towards the surface is observed before sulphurisation is completed. This fact is accompanied by a significant increase of the structural quality of the CIS film, which allows for the fabrication of high efficiency solar cell devices. The performed analysis corroborates the strong complementarity between the used techniques for the detailed microstructural analysis of complex multilayer systems.

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