Article

Determination of Cu(In1−xGax)3Se5 defect phase in MBE grown Cu(In1−xGax)Se2 thin film by Rietveld analysis

Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan; National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan
Solar Energy Materials and Solar Cells DOI:10.1016/j.solmat.2010.04.026

ABSTRACT Quantitative phase analysis of Cu(In1−xGax)Se2 (CIGS) thin film grown over Mo coated soda lime glass substrates was studied by Rietveld refinement process using room temperature X-ray data at θ–2θ mode. Films were found to contain both stoichiometric Cu(In1−xGax)Se2 and defect related Cu(In1−xGax)3Se5 phases. Best fitting was obtained using crystal structure with space group I-42d for Cu(In1−xGax)Se2 and I-42m for Cu(In1−xGax)3Se5 phase. The effects of Ga/III (=Ga/In+Ga=x) ratio and Se flux during growth over the formation of Cu(In1−xGax)3Se5 defect phase in CIGS was studied and the correlation between quantity of Cu(In1−xGax)3Se5 phase and solar cell performance is discussed.

0 0
 · 
0 Bookmarks
 · 
35 Views
Data provided are for informational purposes only. Although carefully collected, accuracy cannot be guaranteed. The impact factor represents a rough estimation of the journal's impact factor and does not reflect the actual current impact factor. Publisher conditions are provided by RoMEO. Differing provisions from the publisher's actual policy or licence agreement may be applicable.

Keywords

crystal structure
 
Mo
 
Quantitative phase analysis
 
Rietveld refinement process
 
Se flux
 
soda lime glass substrates
 
solar cell performance
 
stoichiometric Cu(In1−xGax)Se2
 
θ–2θ mode