Thermal simulations of high power, bulk GaN rectifiers

Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA; Multiplex Inc., South Plainfield, NJ 07080, USA; Department of Material Science and Engineering, University of Florida, Gainesville, FL 32611, USA; Samsung Advanced Institute of Technology, Suwon 440-600, South Korea
Solid-State Electronics (Impact Factor: 1.48). 01/2003; DOI: 10.1016/S0038-1101(02)00481-1

ABSTRACT A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-state resistance. The temperature difference between flip-chip bonded devices and bottom bonded devices was 20 °C even at modest current densities. The maximum temperature in the bulk cases occurred in the center of the GaN substrate thickness. The transit time of the temperature reaching the steady state for the flip-chip bonding device is in the range of millisecond, which is faster than that of most power switch applications. Flip-chip bonding is suggested to improve the heat dissipation of high power, bulk GaN rectifiers.

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    ABSTRACT: Electronics has become omnipresent in our everyday lives. Occurring in all modern machines in the form of systems, functions, and components, it is gradually supplementing or replacing those functions previously carried out exclusively by mechanics, electromechanics, hydraulics, and pneumatics, by making the processes faster, more flexible, and safer in a quite spectacular way, and enriching the interaction between human and machine, until it has become a key feature of innovation and competitivity in all sectors of the economy. The preliminary ‘electronification’ of existing systems is quickly followed by ever more sophisticated attempts to integrate electronic components and functions as close as possible to the target information sources and the devices to be operated, positioning the information processing and storage centers (processor and memory) as judiciously as possible. In this way, all kinds of chip are taken away from the sheltered conditions of specialised containers and end up having to operate in whatever environment prevails at the heart of the system they are designed to serve. In high speed trains, the encapsulated chips of the power switches are in contact with the alternator, at temperatures that sometimes reach 300°C, while those controlling car ignition must resist humidity and corrosion, and the power transistors in radars and lasers of on-board lidar systems have to operate at high altitudes, at sea, or in the field.
    01/1970: pages 367-386;


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