Reverse-bias safe operation area of large area MCT and IGBT

Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA 24060-0111, USA
Solid-State Electronics (Impact Factor: 1.48). 01/2003; DOI: 10.1016/S0038-1101(02)00310-6

ABSTRACT A comprehensive investigation of the reverse-bias safe operation area (RBSOA) of large area MOS controlled thyristor (MCT) and insulated gate bipolar transistor (IGBT) was performed and results are reported in this paper. Multi-cell devices turn-off failure due to non-uniform gate delay was first investigated. Fundamental device characteristic difference between MCT and IGBT was discussed. It is found that, under isothermal and homogeneity condition, the RBSOAs of both devices are determined by the sustain-mode dynamic avalanche limitation and the maximum controllable current density limitation. If device inhomogeneity exists, the turn-off failure will occur at power densities that are much lower than the RBSOA decided by these two limitations. A new parameter, called dynamic avalanche conductance (gdynamic), was defined to describe the characteristic of dynamic avalanche of the two devices. Finally, the RBSOAs of large area MCT and IGBT are summarized and compared.

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    ABSTRACT: In the paper proposed here, we are studying the dynamic avalanche from experimental results first, dynamic avalanche is identified on a punch through insulated gate bipolar transistor (PT-IGBT) module 1200 V–300 A from Mitsubishi. Secondly, the phenomenon is analysed thanks to simple solid state devices equations. Numerical simulations are used to confirm experimental results. Simulation results allows us locating the active area of the dynamic avalanche during turn-off under over-current conditions. A PT-IGBT cell is described with MEDICI™, a finite element simulator. A mixed-mode simulation is performed thanks to MEDICI™ and SPICE™. The circuit simulated here is a buck topology with an inductive load. Finally, a thermal analysis is performed to estimate temperature increase due to dynamic avalanche.
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    ABSTRACT: The investigation of the internal physical behaviour of the punch through trench insulated gate bipolar transistor, under clamped inductive switching turn-off has been done. A two dimensional mixed circuit and device simulation tool has been used and two switching configurations have been carried out: a non-destructive and a destructive turn-off switchings have been analyzed and compared to each other. The results show that the failure is delayed after the turn-off and is due to a thermal runaway phenomenon initiated by the temperature rise within the device during the switching transient.

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