Reverse-bias safe operation area of large area MCT and IGBT

Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA 24060-0111, USA
Solid-State Electronics (Impact Factor: 1.5). 01/2003; 47(1):1-14. DOI: 10.1016/S0038-1101(02)00310-6


A comprehensive investigation of the reverse-bias safe operation area (RBSOA) of large area MOS controlled thyristor (MCT) and insulated gate bipolar transistor (IGBT) was performed and results are reported in this paper. Multi-cell devices turn-off failure due to non-uniform gate delay was first investigated. Fundamental device characteristic difference between MCT and IGBT was discussed. It is found that, under isothermal and homogeneity condition, the RBSOAs of both devices are determined by the sustain-mode dynamic avalanche limitation and the maximum controllable current density limitation. If device inhomogeneity exists, the turn-off failure will occur at power densities that are much lower than the RBSOA decided by these two limitations. A new parameter, called dynamic avalanche conductance (gdynamic), was defined to describe the characteristic of dynamic avalanche of the two devices. Finally, the RBSOAs of large area MCT and IGBT are summarized and compared.

Download full-text


Available from: Alex Q. Huang, Oct 10, 2014

Click to see the full-text of:

Article: Reverse-bias safe operation area of large area MCT and IGBT

648.11 KB

See full-text
  • Source
    • ". In fact for these modules the manufacturer designs the internal interconnections in order to evenly distribute the current between the paralleled IGBT chips that compose the module and to avoid the current focalization [5] [6] [7]. "
    [Show abstract] [Hide abstract]
    ABSTRACT: The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different driving conditions is presented. Several devices of different generations, current and voltage ratings have been considered. The experimental characterisation has been performed by means of a non-destructive experimental set-up where IGBT modules are switched in presence of a protection circuit that is able to prevent device failure at the occurrence of any possible instable behaviour. The experimental analysis confirms the very good robustness of high power IGBT modules which can withstand large current overstress well beyond the declared RBSOA limits even at temperatures larger than those one declared by manufacturers. A comparison between IGBT device generation is also presented.
    Microelectronics Reliability 08/2008; 48(8-48):1435-1439. DOI:10.1016/j.microrel.2008.07.027 · 1.43 Impact Factor
  • Source
    • "During high electrical and thermal stresses applied in many power module applications, different failures can occur, for example, under short circuit [1] [2] [3] [4] [5] [6] [7] and inductive switching conditions [8] [9] [10]. Those failures are often illustrated as drastic increasing of the total current in the power components, leading in many cases to the destruction of the device. "
    [Show abstract] [Hide abstract]
    ABSTRACT: A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify if the failure mechanism is due to a breakdown, a latchup or a thermal runaway phenomenon.
    Microelectronics Reliability 09/2007; 47(9). DOI:10.1016/j.microrel.2007.07.051 · 1.43 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: The influence of nonideal interconnection between controlled cells in bipolar microgate switches on current localization at the turn-off stage is analyzed. To estimate the resistance of the distributed electrodes, the entire device is represented as two parallel subsystems of controlled cells interconnected via the effective resistance of the gate circuit. Different scenarios of the turn-off process at nonideal couplings between the cells are numerically simulated for three turn-off circuit regimes by the example of an integrated thyristor with external field control. The turn-off scenarios are studied versus the effective resistance of the gate-off circuit and the ratio between the working surface areas of the cellular subsystems. Limitations on the ultimate switched current are compared. For small-scale inhomogeneities in the series resistance of the gate circuit, the maximum turn-off current in the cascode mode and using a negative voltage source remains an order of magnitude higher than that under the emitter short-circuit conditions.
    Technical Physics 05/2012; 57(5). DOI:10.1134/S106378421205012X · 0.52 Impact Factor
Show more