Article

Tritium migration in vapor-deposited β-silicon carbide

Sandia National Laboratories, Livemore, CA 94550, USA; W.R. Wampler; Sandia National Laboratories, Albuquerque, NM 87185, USA; J.R. Retelle; US Department of Energy, Albuquerque, NM 87185-5400, USA; J.L. Kaae; General Atomics, San Diego, CA 92121, USA
Journal of Nuclear Materials DOI:10.1016/0022-3115(93)90376-A pp.196-205

ABSTRACT Tritium diffusivities and solubilities have been measured for vapor-deposited β-silicon carbide. The solubility measurements were performed over the temperature range of 1000 to 1600°C and the pressure range 0.01 to 1.0 atm. Diffusivities were determined for the temperature range of 1100 to 1500°C. The magnitude of the diffusivity was much lower than that for metals and the activation energy was much higher. The measured solubility had a negative heat of solution and, when corrected for surface absorption, varied linearly with the square-root of pressure. The low diffusivity along with the apparent negative heat of solution are indicative of trap-controlled migration of tritium in the silicon carbide.

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Keywords

activation energy
 
apparent negative heat
 
Diffusivities
 
measured solubility
 
negative heat
 
silicon carbide
 
solubility measurements
 
square-root
 
surface absorption
 
temperature range
 
trap-controlled migration
 
Tritium diffusivities
 
vapor-deposited β-silicon carbide
 

R.A. Causey