Article

Compton scattering studies of the electron momentum distribution in indium phosphide

Department of Physics, Bose Institute, Calcutta 700 009, India; Radio Chemistry Division, Bhaba Atomic Research Centre, Calcutta 700 064, India
Radiation Physics and Chemistry DOI:10.1016/S0969-806X(98)00304-1 pp.335-344

ABSTRACT The electron momentum anisotropy of indium phosphide has been studied by measuring the directional Compton profiles of indium phosphide single crystals with the use of radiation from an 241Am gamma source. Three different samples, cut along the [100], [110] and [111] planes, were used. The experimental anisotropy has been compared with the results based on the linear combination of Gaussian orbitals (LCGO) method. The agreement is very good with our theoretical results. It is found that the extrema appearing in the dependences on q of the anisotropies have an intimate connection with the bonding properties of the semiconductor. A self-consistent, all-electron, local density calculation for the partial density of states, total density of states and the charge analysis is also presented here.

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Keywords

241Am gamma source
 
bonding properties
 
charge analysis
 
dependences
 
different samples
 
directional Compton profiles
 
indium phosphide single crystals
 
intimate connection
 
linear combination
 
partial density
 
self-consistent
 
theoretical results