Article

de Haas–van Alphen effect investigations of the electronic structure of pure and aluminum-doped MgB2

H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom; Department of Physics, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
Physica C: Superconductivity DOI:10.1016/j.physc.2007.01.027 pp.92-101

ABSTRACT Our understanding of the superconducting properties of MgB2 is strongly linked to our knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and Al-doped MgB2 using the de Haas–van Alphen (dHvA) effect. In general, the measurements are in excellent agreement with the theoretical predictions of the electronic structure, including the strength of the electron–phonon coupling on each Fermi surface sheet. For the Al doped samples, we are able to measure how the band structure changes with doping. These results are in excellent agreement with calculations based on the virtual crystal approximation. We also review work on the dHvA effect in the superconducting state.

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Keywords

Al doped samples
 
Al-doped MgB2
 
band structure changes
 
calculations
 
de Haas–van Alphen
 
dHvA
 
dHvA effect
 
electronic structure
 
excellent agreement
 
Fermi surface parameters
 
superconducting properties
 
superconducting state
 
theoretical predictions
 
virtual crystal approximation