Wide band gap p-type windows by CBD and SILAR methods

Department of Solar Energy Research, Hahn-Meitner-Institut, Glienicker Strasse 100, D-14109 Berlin, Germany
Thin Solid Films (Impact Factor: 1.87). 01/2004; DOI: 10.1016/j.tsf.2003.11.002

ABSTRACT Chemical deposition methods, namely, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 °C) in aqueous medium. Growth of these films requires the use of Cu (I) cations as a copper ions source. This is achieved by complexing Cu (II) ions using Na2S2O3. The anion sources are either KI as iodine or KSCN as thiocyanide ions for CuI and CuSCN films, respectively. The preparative parameters are optimized with the aim to use these p-type materials as windows for solar cells. Different substrates are used, namely: glass, fluorine doped tin oxide coated glass and CuInS2 (CIS). X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical absorption spectroscopy are used for structural, surface morphological and optical studies, and the results are discussed.

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    ABSTRACT: Pulsed electrodeposition at room temperature is shown to be a facile, simple and fast method for super-filling of CuSCN onto ZnO nanowire arrays for applications in transparent diodes and optoelectronic devices. Compared to previously suggested methods for CuSCN superfilling, it offers the advantages of low cost, room temperature deposition in a one-pot process, combined with fast deposition rates, making it highly accessible for lab-scale deposition as well as scale up for industrial processes. Each pulse consisted of a working time ton, at which the potential was -500 mV vs. Ag/AgCl, and an off period toff, at which zero potential vs. Ag/AgCl was applied. The toff interval discharged the charged layer and regenerated the ion concentration near the cathode surface, resulting in denser nucleation and a more uniform coating. The pulse sequence controlled the deposition rate and the S/Cu ratio in the deposited CuSCN films, which was larger than in corresponding electrostatic depositions, due to higher SCN− concentration near the ZnO surface accomplished during the toff interval. Current-voltage characteristics showed excellent diode properties, significantly better than those of potentiostatic deposited CuSCN/ZnO diodes. We conclude that when high currents in transparent diodes are desirable, as in photovoltaic applications, pulsed electrodeposition and super-filling have significant advantages, with the pulse sequence ton = 2 sec, toff = 1 sec resulting in high deposition rates and optimized diode parameters.
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