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Toward a systematic understanding of photodetectors based on individual metal oxide nanowires

Journal of Physical Chemistry C 112:14639-14644. DOI:10.1021/jp804614q ISBN: 1932-7447 pp.14639-14644
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    Article: A comprehensive review of one-dimensional metal-oxide nanostructure photodetectors.
    Tianyou Zhai, Xiaosheng Fang, Meiyong Liao, Xijin Xu, Haibo Zeng, Bando Yoshio, Dmitri Golberg
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    ABSTRACT: One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years. Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET) whose properties can be controlled by applying appropriate potentials onto the gates. Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities. This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field. It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO(2), Cu(2)O, Ga(2)O(3), Fe(2)O(3), In(2)O(3), CdO, CeO(2), and their photoresponses. The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials. Finally, the review is concluded with some perspectives and outlook on the future developments in this area.
    Sensors 01/2009; 9(8):6504-29. · 1.74 Impact Factor
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    Article: Shrinkage Effects of the Conduction Zone in the Electrical Properties of Metal Oxide Nanocrystals: The Basis for Room Temperature Conductometric Gas Sensor
    Manzanares M, Andreu T, J. D. Prades, Arbiol J, Hernandez-Ramírez F, Cirera A, J.R. Morante
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    ABSTRACT: The influence of charge localized at the surface of minute metal oxide nanocrystals was studied in WO3 and In2O3 nanostructures, which were obtained replicating mesoporous silica templates. Here, it is shown that the very high resistive states observed at room temperature and dark conditions were originated by the total shrinkage of the conductive zone in the inner part of these nanocrystals. On the contrary, at room temperature and under UV illumination, both photogenerated electron-hole pairs and empty surface states generated by photons diminished the negative charge accumulated at the surface, enlarging the conductive zone and, as a consequence, leading to a reduction of the electrical resistance. Under these conditions, empty surface states produced by UV light reacted with oxidizing gaseous molecules. The charge exchange associated to these reactions also affected the size of the inner conductive zone, and leaded to a new steady-state resistance. These chemical, physical and geometrical effects can be used for gas detection, and constitutes the basis for developing novel room temperature conductometric gas sensors responsive to oxidizing species.
    Journal of Sensors. 01/2009;
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    Article: Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy
    Rigutti Lorenzo, Andres De Luna Bugallo, Tchernycheva Maria, Jacopin Gwenole, François H. Julien, Cirlin George, Patriarche Gilles, Lucot Damien, Travers Laurent, Harmand Jean-Christophe
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    ABSTRACT: We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as 5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.
    Journal of Nanomaterials. 01/2009;

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