Phase inverted Shubnikov-de Haas oscillation in bismuth
Cryogenic Centre, University of Tokyo Tokyo, JapanPhysica B+C 08/1981; 108(1-3):819-820. DOI: 10.1016/0378-4363(81)90714-2
Transverse magnetoresistance and Hall effect in slightly uncompensated bismuth single crystals have been measured at low temperatures. Contrary to the high purity bismuth, anomalous phenomena, i.e. perfect phase inversion and amplitude enhancement of the Shubnikov-de Haas oscillation in transverse magnetoresistance were observed. It was also found that the non-oscillatory part of the magnetoresistance does not obey the H2 law but tends to saturate with the increase of the magnetic field H. A phenomenological theory is proposed, which can explain these experimental results inclusively.
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ABSTRACT: Transverse magnetoresistance of pure and ionized impurity (5, 10, 30, 55 and 100 ppm tin) doped antimony single crystals was measured up to 15 T at 1.4 K. Compared with pure antimony, phase inversion of the Shubnikov de Haas (SdH) oscillation was observed in the doped samples. Moreover, a marked increase in the oscillation amplitude was found in doped antimony. Typically, the SdH oscillation amplitude of 30 ppm tin-doped antimony was almost twice that of pure antimony. Hall resistivity rhoyx was also measured for the same doped sample in order to obtain the conductivity tensor component sigmaxx. Phase inversion was explained by taking account of component sigmaxy in magnetoresistivity rhoxx. The large SdH oscillation amplitude in the tin-doped samples was attributed to the scattering by ionized impurities and to be a direct reflection of the state density at the Fermi level.Japanese Journal of Applied Physics 01/1998; 37(1):161-165. DOI:10.1143/JJAP.37.161 · 1.13 Impact Factor
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