Components for silicon plasmonic nanocircuits based on horizontal Cu-SiO2-Si-SiO2-Cu nanoplasmonic waveguides
Institute of Microelectronics, A STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park-II, Singapore 117685, Singapore. Optics Express
(Impact Factor: 3.49).
03/2012; 20(6):5867-81. DOI: 10.1364/OE.20.005867
We report systematic results on the development of horizontal Cu-SiO₂-Si-SiO₂-Cu nanoplasmonic waveguide components operating at 1550-nm telecom wavelengths, including straight waveguides, sharp 90° bends, power splitters, and Mach-Zehnder interferometers (MZIs). Owing to the relatively low loss for propagating (~0.3 dB/µm) and for 90° sharply bending (~0.73 dB/turn), various ultracompact power splitters and MZIs are experimentally realized on a silicon-on-insulator (SOI) platform using standard CMOS technology. The demonstrated splitters exhibit a relatively low excess loss and the MZIs exhibit good performance such as high extinction ratio of ~18 dB and low normalized insertion loss of ~1.7 dB. The experimental results of these devices agree well with those predicted from numerical simulations with suitable Cu permittivity data.
Available from: Jin-Soo Shin
- "By confining the light beam in subwavelength scale dimensions with a comparatively low propagation loss, they generate a synergetic effect when realized as EPICs on conventional nanoelectronic chips. With the aid of numerous design approaches, a variety of passive and active plasmonic waveguide devices have been developed to guide, modulate, split, and detect light signals       . "
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ABSTRACT: Graphene is an excellent electronic and photonic material for developing electronic-photonic integrated circuits in Si-based semiconductor devices with ultra wide operational bandwidth. As an extended application, here we propose a broadband silicon optical modulator using a graphene-integrated hybrid plasmonic waveguide, and investigate the optical characteristics numerically at a wavelength of 1.55 μm. The optical device is based on the surface plasmon polariton absorption of graphene. By electrically tuning the graphene's refractive index as low as that of a noble metal, the hybrid plasmonic waveguide supports a strongly confined highly lossy hybrid long-range surface plasmon polariton strip mode, and hence light coupled from an input waveguide experiences significant power attenuation as it propagates along the waveguide. Over the entire C-band from 1.530 to 1.565 μm wavelengths, the on/off extinction ratio is larger than 13.7 dB. This modulator has the potential to play a key role in realizing graphene-Si waveguide-based integrated photonic devices.
Nanotechnology 08/2015; 26(36):365201. DOI:10.1088/0957-4484/26/36/365201 · 3.82 Impact Factor
Available from: iopscience.iop.org
- "In combination with silicon photonics, plasmonics has extended its applications in photonic integrated circuits (PICs). A variety of Si-based hybrid plasmonic components have been developed to date, including waveguides, dividers, couplers, resonators, modulators and detectors        . Si-based plasmonic waveguide devices are paving a promising way to realize system-level plasmonic integrated circuits both on-chip and intra-chip  . "
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ABSTRACT: A vertical polarization beam splitter using a hybrid long-range surface plasmon polariton (LR-SPP) waveguide is proposed for three-dimensional integration of silicon photonic circuits in a chip. The device is based on a three-port directional coupler that is operated based on mode coupling theory. The hybrid LR-SPP waveguide as the central waveguide in a three-port directional coupler plays a key role in transferring the transverse-magnetic (TM)-polarization mode from the input port to the cross port, which is configured with horizontal and vertical offsets. A 9.7 μm-long vertical polarization splitter with an extinction ratio of 30 dB in the C-band is achieved. The effects of dimensional tolerances are also investigated. The vertical polarization splitter is highly compatible with a complementary metal-oxide-semiconductor (CMOS) fabrication process based on the silicon-on-insulator (SOI) platform.
Journal of optics 12/2013; 16(2). DOI:10.1088/2040-8978/16/2/025501 · 2.06 Impact Factor
Available from: opticsinfobase.org
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ABSTRACT: Ultracompact Cu-capped Si hybrid plasmonic waveguide-ring resonators (WRRs) with ring radii of 1.09-2.59 μm are fabricated on silicon on insulator substrates using standard complementary metal-oxide-semiconductor technology and characterized over the telecom wavelength range of 1.52-1.62 μm. The dependence of the spectral characteristics on the key structural parameters such as the Si core width, the ring radius, the separation gap between the ring and bus waveguides, and the ring configuration is systematically studied. A WRR with 2.59-μm radius and 0.250-μm nominal gap exhibits good performances such as normalized insertion loss of ~0.1 dB, extinction ratio of ~12.8 dB, free spectral range of ~47 nm, and quality factor of ~275. The resonance wavelength is redshifted by ~4.6 nm and an extinction ratio of ~7.5 dB is achieved with temperature increasing from 27 to 82°C. The corresponding effective thermo-optical coefficient (dn(g)/dT) is estimated to be ~1.6 × 10(-4) K(-1), which is contributed by the thermo-optical effect of both the Si core and the Cu cap, as revealed by numerical simulations. Combined with the compact size and the high thermal conductivity of Cu, various effective thermo-optical devices based on these Cu-capped plasmonic WRRs could be realized for seamless integration in existing Si electronic-photonic integrated circuits.
Optics Express 07/2012; 20(14):15232-46. DOI:10.1364/OE.20.015232 · 3.49 Impact Factor
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