Article

A third-order complementary metal-oxide-semiconductor sigma-delta modulator operating between 4.2 K and 300 K.

Department of Electrical Engineering, KU Leuven, Leuven, Belgium.
The Review of scientific instruments (impact factor: 1.52). 02/2012; 83(2):024708. DOI:10.1063/1.3681781 pp.024708
Source: PubMed

ABSTRACT This paper presents a third-order switched-capacitor sigma-delta modulator implemented in a standard 0.35-μm CMOS process. It operates from 300 K down to 4.2 K, achieving 70.8 dB signal-to-noise-plus-distortion ratio (SNDR) in a signal bandwidth of 5 kHz with a sampling frequency of 500 kHz at 300 K. The modulator utilizes an operational transconductance amplifier in its loop filter, whose architecture has been optimized in order to eliminate the cryogenic anomalies below the freeze-out temperature. At 4.2 K, the modulator achieves 67.7 dB SNDR consuming 21.17 μA current from a 3.3 V supply.

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Keywords

70.8 dB signal-to-noise-plus-distortion ratio
 
cryogenic anomalies
 
freeze-out temperature
 
loop filter
 
modulator utilizes
 
operational transconductance amplifier
 
signal bandwidth
 
third-order switched-capacitor sigma-delta modulator