Field emission from in situ-grown vertically aligned SnO

State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China. .
Nanoscale Research Letters (Impact Factor: 2.78). 02/2012; 7(1):117. DOI: 10.1186/1556-276X-7-117
Source: PubMed


Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/μm were obtained at anode-cathode separations of 100 to 200 μm. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/μm. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters.

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Available from: Zhihua Zhou, Oct 13, 2015
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    • "One-dimensional (1D) nanomaterials are attractive building blocks for future high-performance nanoscale devices and sensors [1-3]. With their unique structural characteristics and versatile physical properties, semiconductor nanowires and nanoribbons have been applied to photodetectors [4], nanolasers [5], surface-enhanced Raman scattering (SERS) [6], solar cells [7], sensors, and so on [8,9]. "
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    ABSTRACT: Monocrystal SnO2 and Pd-SnO2 nanoribbons have been successfully synthesized by thermal evaporation, and novel ethanol sensors based on a single Pd-SnO2 nanoribbon and a single SnO2 nanoribbon were fabricated. The sensing properties of SnO2 nanoribbon (SnO2 NB) and Pd-doped SnO2 nanoribbon (Pd-SnO2 NB) sensors were investigated. The results indicated that the SnO2 NB showed a high sensitivity to ethanol and the Pd-SnO2 NB has a much higher sensitivity of 4.3 at 1,000 ppm of ethanol at 230°C, which is the highest sensitivity for a SnO2-based NB. Pd-SnO2 NB can detect ethanol in a wide range of concentration (1 ~ 1,000 ppm) with a relatively quick response (recovery) time of 8 s (9 s) at a temperature from 100°C to 300°C. In the meantime, the sensing capabilities of the Pd-SnO2 NB under 1 ppm of ethanol at 230°C will help to promote the sensitivity of a single nanoribbon sensor. Excellent performances of such a sensor make it a promising candidate for a device design toward ever-shrinking dimensions because a single nanoribbon device is easily integrated in the electronic devices.
    Nanoscale Research Letters 09/2014; 9(1):503. DOI:10.1186/1556-276X-9-503 · 2.78 Impact Factor
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    • "In the past decade, significant interest has emerged in the synthesis of one-dimensional semiconductor materials, such as Si [1-3], SiC [4,5], GaN [6-8], SnO2 [9] and ZnO [10-13]. Among these nanoscale semiconductors, ZnO has attracted a great deal of attention because of its potential as a large direct band gap semiconductor (Eg is about 3.35 eV at room temperature) with high exciton binding energy (60 meV). "
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    ABSTRACT: ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices.
    Nanoscale Research Letters 04/2012; 7(1):220. DOI:10.1186/1556-276X-7-220 · 2.78 Impact Factor
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    • "In this paper, we report self-assembly of the long ZnO nanowire arrays without the use of catalyst on a silicon (100) substrate by the CVD method where the length of nanowires is about 310 μm after a reaction time of 60 min. Zhou et al. [27] had investigated the field emission properties of tin dioxide (SnO2) nanowire arrays, and in this article, the field emission properties of the different synthesized ZnO nanostructures were investigated. Some differences in the field-enhancement factors between the different nanostructures were observed. "
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    ABSTRACT: In this article, zinc oxide (ZnO) nanostructures of different shapes were fabricated on silicon substrate. Well-aligned and long ZnO nanowire (NW) arrays, as well as leaf-like ZnO nanostructures (which consist of modulated and single-phase structures), were fabricated by a chemical vapor deposition (CVD) method without the assistance of a catalyst. On the other hand, needle-like ZnO NW arrays were first fabricated with the CVD process followed by chemical etching of the NW arrays. The use of chemical etching provides a low-cost and convenient method of obtaining the needle-like arrays. In addition, the field emission properties of the different ZnO NW arrays were also investigated where some differences in the turn-on field and the field-enhancement factors were observed for the ZnO nanostructures of different lengths and shapes. It was experimentally observed that the leaf-like ZnO nanostructure is most suitable for field emission due to its lowest turn-on and threshold field as well as its high field-enhancement factor among the different synthesized nanostructures.
    Nanoscale Research Letters 03/2012; 7(1):197. DOI:10.1186/1556-276X-7-197 · 2.78 Impact Factor
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