Article

Continuous electrical tuning of the chemical composition of TaO(x)-based memristors.

Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304, USA.
ACS Nano (impact factor: 10.77). 02/2012; 6(3):2312-8. DOI:10.1021/nn2044577 pp.2312-8
Source: PubMed

ABSTRACT TaO(x)-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO(x) memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.

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Keywords

continuous electrical tunability
 
different TaO(x)
 
electrical characteristics
 
new class
 
one transistor-one memristor
 
physical state variable
 
reference Ta-O films
 
solid-state chemical kinetics
 
subnanosecond resistance switching speeds