Linear photon up-conversion of 450 meV in InGaN/GaN multiple quantum wells via Mn-doped GaN intermediate band photodetection

Department of Photonics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan City 70101, Taiwan.
Optics Express (Impact Factor: 3.49). 11/2011; 19 Suppl 6(23):A1211-8. DOI: 10.1364/OE.19.0A1211
Source: PubMed


Up-converted heterostructures with a Mn-doped GaN intermediate band photodetection layer and an InGaN/GaN multiple quantum well (MQW) luminescence layer grown by metal-organic vapor-phase epitaxy are demonstrated. The up-converters exhibit a significant up-converted photoluminescence (UPL) signal. Power-dependent UPL and spectral responses indicate that the UPL emission is due to photo-carrier injection from the Mn-doped GaN layer into InGaN/GaN MQWs. Photons convert from 2.54 to 2.99 eV via a single-photon absorption process to exhibit a linear up-conversion photon energy of ~450 meV without applying bias voltage. Therefore, the up-conversion process could be interpreted within the uncomplicated energy level model.

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