Crosstalk in Deep Submicron DRAMs.
ABSTRACT This study examines the effect of crosstalk on the operations of DRAMs that are implemented in deep submicron technology, 0.18 µm. An extensive simulation revealed that the coupling between word lines and between bit lines alter the cell contents during reading and writing operations as well as retention of the different cells The effect is more likely when the poly instead of aluminum is used. Coupling between bit and word lines did not have such serious outcome.
- SourceAvailable from: Huawei Li
[Show abstract] [Hide abstract]
- ". Pixel architecture with internal RAM in gray . in cameras . Emerging high-definition images and videos require high capacity memories, e.g., the Roundshot D3 camera with a 48-bit color depth and an 80-mm lens from the Seitz company is able to shoot images of 470 million pixels , which means the raw image is over 2 GB. "
ABSTRACT: Emerging nonvolatile memories such as phase change memory (PCM) have the potential to replace internal memories in embedded devices. In this brief, we propose to use PCM as image buffer in application-specific multimedia systems. To improve the lifetime of PCM-based image buffer, we first eliminate redundant writes using data comparison. After redundant write elimination, PCM cells with respect to lower order bits of pixels are written more frequently than those corresponding to higher order. Based on this observation, we show that the lifetime can be further improved either by wear leveling using periodical data reversion to make write traffic even across PCM cells or by application-level error tolerance evaluation without leveling. Experimental results demonstrate that with the proposed techniques, the lifetime of PCM-based image buffer can be improved significantly.IEEE Transactions on Very Large Scale Integration (VLSI) Systems 06/2014; 22(6):1450-1455. DOI:10.1109/TVLSI.2013.2266668 · 1.14 Impact Factor
- [Show abstract] [Hide abstract]
ABSTRACT: This paper presents an approach for measuring crosstalk interference in digital CMOS VLSI circuits. The crosstalk sensor has been implemented in 0.8 μm AMS (Austria Mikro Systeme) technology and its design is based on NOR and NAND RS latches. The interference is produced by an up (down) transition in an affecting line. The crosstalk sensor is designed to measure crosstalk interference amplitude produced by capacitive coupling between long metal lines. The sensor is programmable for measuring some ranges of crosstalk amplitude. The sensor design is based on the dynamic behavior of basic NOR and NAND gates depending on the MOS transistor sizesOn-Line Testing Workshop, 2000. Proceedings. 6th IEEE International; 02/2000
- [Show abstract] [Hide abstract]
ABSTRACT: This paper introduces a cost effective multichip module (MCM) for video graphic acceleration (VGA) of portable computers. A 1.7 million gate graphic processor IC and two 8 M byte DRAM chips have been integrated into a 31×31 mm<sup>2</sup> 4-layer PBGA. Signal integrity measurement and analysis has been performed to optimize performance of the present design and a direction for improvement for the next generation product. This study confirms that more consideration given to the MCM application at the IC design stage will maximize MCM performanceIEEE Transactions on Advanced Packaging 09/2001; DOI:10.1109/6040.938298 · 1.28 Impact Factor