Conference Paper

Thermal coupling in ICs: Applications to the test and characterization of analogue and RF circuits.

DOI: 10.1109/IOLTS.2010.5560220 Conference: 16th IEEE International On-Line Testing Symposium (IOLTS 2010), 5-7 July, 2010, Corfu, Greece
Source: DBLP

ABSTRACT In this presentation we cover how to use low frequency or DC temperature measurements to observe figures of merit of high frequency analogue circuits.

Download full-text


Available from: Diego Mateo, Jul 08, 2015
  • [Show abstract] [Hide abstract]
    ABSTRACT: The observation of spectral components of the power dissipated by devices and circuits in integrated circuits (IC) by temperature measurements is limited by the bandwidth of either the temperature transducer or the intrinsic cut-off frequency provided by the thermal coupling inside the chip. In this paper, we use a heterodyne method to observe the high-frequency behavior of circuits and devices by means of low-frequency lock-in temperature measurements. As experimental results, two applications of the technique are presented: detection of hot spots in ICs activated by high-frequency electrical signals and the observation of the frequency response of an integrated resistor through temperature measurements. The heterodyne method has been used in this paper with four different measurement techniques: embedded differential BiCMOS temperature sensor, laser reflectometer, laser interferometer and internal IR laser deflection meter.
    Measurement Science and Technology 09/2008; 19(11):115704. DOI:10.1088/0957-0233/19/11/115704 · 1.35 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: Four differential temperature sensors, two passive and two active, designed and fabricated in a 0.35-m standard CMOS technology, are presented and characterized. Passive sensors are based on integrated thermopiles. Each one consists of eight thermocouples (16 strips) serially connected: poly1-poly2 for the first thermopile and poly1-P+diffusion for the second one. The active sensors are based on differential amplifiers, one with single-ended output and the other with differential output. Lateral parasitic bipolar transistors are used as temperature transducer devices. Both simulated and experimental characterizations are presented. The high sensitivity of active differential temperature sensors proves the feasibility of such sensors to observe the power dissipated by devices and circuits embedded in the same silicon die, with applications to the test and characterization of circuits, packaging characterization and compensation of thermal gradients, among others.
    IEEE Transactions on Components and Packaging Technologies 01/2008; DOI:10.1109/TCAPT.2007.906349 · 0.96 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: Measuring techniques of the die surface temperature in integrated circuits are reported as very appropriate for failure analysis, for thermal characterization, and for testing modern devices. The paper is arranged as a survey of techniques oriented towards measuring the temperature dynamics of the circuit surface and presenting and discussing both the merits and drawbacks of each technique with regard to the accuracy, reliability and efficiency of the measurements. Two methods are presented in detail: laser probing methods, based on interferometry and thermoreflectance, and embedded CMOS circuit sensors. For these techniques, the physical principles, the state of the art in figures of merit and some application examples are presented
    Proceedings of the IEEE 09/2006; 94(8-94):1519 - 1533. DOI:10.1109/JPROC.2006.879793 · 5.47 Impact Factor