A 3.9ns 8.9mW 4×4 silicon photonic switch hybrid integrated with CMOS driver.
ABSTRACT The emerging field of silicon photonics targets monolithic integration of optical components in the CMOS process, potentially enabling high bandwidth, high density interconnects with dramatically reduced cost and power dissipation. A broadband photonic switch is a key component of reconfigurable networks which retain data in the optical domain, thus bypassing the latency, bandwidth and power overheads of opto-electronic conversion. Additionally, with WDM channels, multiple data streams can be routed simultaneously using a single optical device. Although many types of discrete silicon photonic switches have been reported, very few of them have been shown to operate with CMOS drivers. Earlier, we have reported two different 2×2 optical switches wirebond packaged with 90nm CMOS drivers. The 2×2 switch reported in is based on a Mach-Zehnder interferometer (MZI), while the one reported in is based on a two-ring resonator.
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ABSTRACT: The stringent on- and off-chip communications demands of future-generation chip multiprocessors require innovative and potentially disruptive technology solutions, such as chip-scale photonic transmission systems. A space-switched, wavelength-parallel photonic network-on-chip has been shown to equip users with high-bandwidth, low-latency links in an energy-efficient manner. Here, experimental measurements on fabricated silicon photonic devices verify a large set of the components needed to construct these networks. The proposed system architecture is reviewed to motivate the demanding performance requirements of the components. Then, systems-level investigations are delineated for multiwavelength electrooptic modulators and photonic switching elements arranged in 1 ?? 2, 2 ?? 2, and 4 ?? 4 formations. Compact (~10 ??m), high-speed (4 Gb/s) modulators, having a large degree of channel scalability (four channels demonstrated), are demonstrated with excellent data integrity (bit error rates (BERs) <10<sup>-12</sup>). Meanwhile, switches are shown to transfer extensive throughput bandwidths (250 Gb/s) with fast switching speeds (<1 ns) and sufficient extinction ratios (>10 dB). Data integrity is also verified for the switches (BERs < 10<sup>-12</sup>) with power penalty measurements amid dynamic operation. These network component demonstrations verify the feasibility of the proposed system architecture, while previous works have verified its efficacy.IEEE Journal of Selected Topics in Quantum Electronics 03/2010; · 4.08 Impact Factor
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ABSTRACT: We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off' switching states over an optical bandwidth of 110 nm, owing to the implementation of broadband 50% couplers. Full 2 x 2 switching functionality is demonstrated, with low power consumption (approximately 3 mW) and a fast switching time (< 4 ns). The utilization of standard CMOS metallization results in a low drive voltage (approximately 1 V) and a record-low V(pi)L (approximately 0.06 V x mm). The wide optical bandwidth is maintained for temperature variations up to 30 K.Optics Express 12/2009; 17(26):24020-9. · 3.55 Impact Factor
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ABSTRACT: We report a low-power silicon photonic ring-resonator switch integrated with a CMOS driver that achieves sub 3.5-ns transition times, below -20-dB crosstalk, and ~1-mW combined switch and driver power consumption. Results are compared to non-resonant Mach-Zehnder based switches.IEEE Photonics Society, 2010 23rd Annual Meeting of the; 12/2010