Conference Proceeding
Channel modeling and detector design for dynamic mode high density probe storage.
01/2008;
pp.1273-1278 In proceeding of: 42nd Annual Conference on Information Sciences and Systems, CISS 2008, Princeton, NJ, USA, 19-21 March 2008
Source: DBLP
- Citations (11)
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Conference Proceeding: Nanoindentation of polycarbonate using carbon nanotube tip
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ABSTRACT: Nanoindentation experiments have been widely used for probing the mechanical and high pressure behavior of small region. One can expect that the spatial resolution of the experiments is improved by using the carbon nanotube tips for an atomic force microscope (AFM), because the nanotubes are well known to have high aspect ratios, small tip radii of curvature and high stiffness. The nanotube tips open out the possibility of mechanical processing in nanometer-scale region on soft material surfaces such as organic polymer or biological samples without degradation of the tips. Recently, we have developed the reliable process for fabrication of the nanotube probe using a scanning electron microscope (SEM). This technique enables us to fabricate an appropriate nanotube tip for the nanoindentation experiments. In this study, we report the nanoindentation properties of the nanotube tips and demonstrate the nanometer processing on the organic polymer surfacesMicroprocesses and Nanotechnology Conference, 2000 International; 08/2000 -
Article: Atomic Force Microscope
Physical Review Letters. 56(9):930-933. -
Article: Nanoscale etching and indentation of a silicon(001) surface with carbon nanotube tips
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ABSTRACT: The possibility of nanoscale etching and indentation of a Si{001}(2 × 1) surface by (8,0) and (10,10) carbon nanotube tips is demonstrated, for the first time, by classical molecular dynamics simulations employing Tersoff's many-body potential for a mixed C/Si/Ge system. In the scenario with the nanotube tip barely touching the surface atomistic etching is observed, whereas in the nanoindentation scenario, the nanotube tip penetrates the surface without much hindrance. The results are explained in terms of the relative strength of the C-C, C-Si, and Si-Si bonds.Nanotechnology 08/1999; 10(3):253. · 3.98 Impact Factor
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