Conference Proceeding
Integrated Design & Test: Conquering the Conflicting Requirements of Low-Power, Variation-Tolerance and Test Cost.
01/2011;
pp.486-491 In proceeding of: Proceedings of the 20th IEEE Asian Test Symposium, ATS 2011, New Delhi, India, November 20-23, 2011
Source: DBLP
- Citations (16)
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Cited In (0)
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Conference Proceeding: A new technique for standby leakage reduction in high-performance circuits
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ABSTRACT: A new standby leakage control technique, which exploits the leakage reduction offered by transistor stacks with “more than one `off' device”, demonstrates 2× reduction in standby leakage power for a 32-bit static CMOS adder in a low-Vt, sub-1V, 0.1 μm technology. Leakage reduction is achieved with minimal overheads in area, power and process technology. The dynamics of leakage reduction due to transistor stacks, and its influence on the overall leakage power of large circuits are elucidated for the first timeVLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on; 07/1998 -
Article: A Gate-Level Leakage Power Reduction Method for Ultra-Low-Power CMOS Circuits
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ABSTRACT: In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing the power supply voltage. This requires that the transistor threshold voltages be reduced as well to maintain adequate performance and noise margins. However, this increases the subthreshold leakage current of p and n MOSFETs, which starts to o#set the power savings obtained from power supply reduction. This problem will worsen in future generations of technology, as threshold voltages are reduced further. In order to overcome this, we propose a design technique that can be used during logic design in order to reduce the leakage current and power. We target designs where parts of the circuit are put in "standby" mode when not in use, which is becoming a common approach for low power design. The proposed design changes consist of minimal overhead circuitry that puts the circuit into a "low leakage standby state," whenever it goes into standby, and allows it to return to its original state...06/1997; -
Article: 1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
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ABSTRACT: 1-V power supply high-speed low-power digital circuit technology with 0.5-μm multithreshold-voltage CMOS (MTCMOS) is proposed. This technology features both low-threshold voltage and high-threshold voltage MOSFET's in a single LSI. The low-threshold voltage MOSFET's enhance speed performance at a low supply voltage of 1 V or less, while the high-threshold voltage MOSFET's suppress the stand-by leakage current during the sleep period. This technology has brought about logic gate characteristics of a 1.7-ns propagation delay time and 0.3-μW/MHz/gate power dissipation with a standard load. In addition, an MTCMOS standard cell library has been developed so that conventional CAD tools can be used to lay out low-voltage LSI's. To demonstrate MTCMOS's effectiveness, a PLL LSI based on standard cells was designed as a carrying vehicle. 18-MHz operation at 1 V was achieved using a 0.5-μm CMOS processIEEE Journal of Solid-State Circuits 09/1995; · 3.23 Impact Factor
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