Low power integrated scan-retention mechanism.
ABSTRACT This paper presents a methodology for unifying the scan mechanism and data retention in latches which leads to scannable latches with the data retention capability achieved at a very low power overhead during the active mode. A detailed analysis of power and area overhead is presented, with layout examples for various common latch styles. Implications of using different power gating techniques for reducing leakage during sleep mode on the design of retention latches are considered, including well biasing for leakage control and sharing wells between gated logic and retention latch devices.
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ABSTRACT: This paper presents a new state retention pulsed latch suitable for low-power and high speed applications. The proposed circuit employs power-gating during idle mode to reduce leakage power, while retaining its state. The pulsed structure of the circuit makes it feasible to be used in high speed designs. The HSPICE simulation conducted for 45nm CMOS technology indicates that in addition to state retention the proposed design, in terms of power-delay product (PDP), device count, and leakage power is comparable to other high performance flip-flops.01/2010;
Low Power Integrated Scan-Retention Mechanism
IBM T.J. Watson Research Center,
Yorktown Heights, NY
Stephen V. Kosonocky
IBM T.J. Watson Research Center,
Yorktown Heights, NY
This paper presents a methodology for unifying the scan mecha-
nism and data retention in latches which leads to scannable latches
with the data retention capability achieved at a very low power
overhead during the active mode. A detailed analysis of power
and area overhead is presented, with layout examples for various
common latch styles. Implications of using different power gating
techniques for reducing leakage during sleep mode on the design of
retention latches are considered, including well biasing for leakage
control and sharing wells between gated logic and retention latch
Categories and Subject Descriptors
B.2.1 [Design Styles]: Pipeline; B.6.1 [Design Styles]: Sequential
circuits; B.7.1 [Types and Design Styles]: VLSI
data retention, MTCMOS, subthreshold, leakage, low power, latch,
scan, balloon latch
As CMOS process technology is scaling, power supply voltage
scales down as well, and so do transistor threshold voltages to
maintain high-speed operation. Although lowering the threshold
voltage reduces circuit delays, it also exponentially increases the
subthreshold leakage currents. Theseleakage currentsleadtopower
dissipation even when the circuit is not doing any useful computa-
tionswhich presentsaserious problem for batteryoperated devices.
The complexity of modern designs has reached a point where
saving power by implementing a non-scannable design is not vi-
able. Scannable latches are part of the standard testing methodol-
ogy, however traditional methods for implementing scannable de-
signs have a power overhead that is not negligible . In this
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ISLPED’02, August 12-14, 2002, Monterey, California, USA.
Copyright 2002 ACM 1-58113-475-4/02/0008 ...$5.00.
paper we propose an integrated scan-retention mechanism that has
a much smaller total power overhead in the active mode than the
combination of the prior art scan and retention mechanisms, imple-
mented independently. We show how the proposed mechanism can
be applied to a variety of latch styles, including those recently re-
ported. Weprovetheconcept withadeveloped layout and testchips
manufactured in a state of the art 0 ?13µ technology, and measure
the exact values for the power and area overheads of the proposed
1.PRIOR ART BALLOON LATCH
Astandard methodof reducing theleakagepower duringinactive
intervals is to use the multi-threshold CMOS (MTCMOS) technol-
ogy, together with sleep or power down modes. According to this
methodology, all logic is built of low-threshold transistors, with a
high-threshold transistor serving as a footer or a header to cut leak-
age during the quiescence intervals. During the normal operation
mode, the MTCMOS circuits achieve high performance, resulting
from the use of low-threshold transistors. During the sleep mode,
high threshold footer or header transistors are used to cut off leak-
age paths, reducing the leakage currents by orders of magnitude.
During the power-down mode the state of all circuits, connected to
the power supply (or ground) through the header or footer is lost. In
most cases the state of the circuit needs to be restored on returning
from the power-down mode, to resume the operation. The state of
sequential circuits is stored in latches or flip-flops, consequently, to
resume the operation of the sequential circuit after returning from
the standby mode, the state of all latches or flip-flops needs to be
restored. A prior art technique for saving and restoring the state of
latches during the power-down mode in MTCMOS sequential cir-
cuits is based on duplicating every regular latch or flip-flop in the
circuit withashadow or balloon latch, andproviding apathtomove
data from the regular flip-flop to the shadow, and back [2, 7]. The
balloon, or shadow latch, shown in Fig. 1, is built of high-threshold
devices, and connected to real power and ground (bypassing the
footer and header transistors). Since the leakage currents through
the high threshold devices are orders of magnitude smaller than
those through the low-threshold transistors, the leakage currents
through the balloon latch during the power-down mode are small,
and can be neglected.
Fig. 1a shows that adding the balloon latchadds ten extra transis-
tors, to the flip-flop, increasing the transistor count from 16 to 26.
Two inverters and transmission gate T7, comprising the balloon
latch add 6 transistors to the circuit. Transmission gates T5 and
T6 add 4 more transistors to the circuit, that provide the path for
moving data between the main latch and the balloon latch. Thus,
the transistor count overhead of the balloon latch is at estimated
inverter built of
inverter built of
transmission gate built of
transmission gate built of
Figure 1: Prior art balloon latch.
as 10 ?16
because of the small size of transistors in the balloon latch).
the latch and its active power, because of the extra parasitic ca-
pacitance of the two transistors of transmission gate T6 that gates
data to and from the balloon latch, and the two transistors in trans-
mission gate T5 in the feedback path of the slave latch. For the
minimum size transistors, the total introduced capacitance that is
charged/discharged during the active mode of operation is Cb
of minimum size transistors, andCwis the wiring capacitance over-
head. This introduced capacitance switches every time new data is
latched. For a latch working with non-overlapping phases of the
clock, it is not affected by glitches at the latch input. Thus, the
power overhead of the data retention feature in the active mode can
be estimated as Pr
α is the activity factor. Simulations show that for a 0 ?13µ bulk
technology with Vdd
overhead of the balloon latch in a design that has 4000 latches is
art low power designs. If the feedback path in theslave latchisbuilt
as shown in Fig. 1a, however, the tranistors in the transmission gate
T5 do not introduce any capacitance that switches during the nor-
mal operation mode, which reduced the introduced capacitance Cb
If there is the scan requirement in addition to the data retention,
and thescanmechanism isimplemented independently of thereten-
tion mechanism, then the combined overhead of the scan-retention
mechanism gets more significant. Even for the state of the art low-
power scan mechanism in  the power overhead of the scan fea-
ture, for the same assumptions is Ps
overhead of the retention and scan mechanisms, implemented in-
dependently is Ps ?r
the active power of state of the art low power low-power product of
In this paper we propose an integrated scan-retention mechanism
that has a much smaller total power overhead in the active mode
than the combination of the prior art scan and retention mecha-
nisms, implemented independently. We show how the proposed
mechanism can be applied to a variety of latch styles, including
those in the recently reported works. We prove the concept with a
developed layout and test chips manufactured in a state of the art
0 ?13µ technology, and measure the exact values for the power and
area overheads of the proposed mechanism.
? 63% (the actual area overhead may be smaller though,
?Cw, whereCdandCgare source and draincapacitances
dd, where f is the clocking rate and
? 1V, f
? 250MHz and α
? 0 ?3 the power
? 0 ?5mW, which is not negligible in state of the
? 0 ?3mW, and the total power
? 0 ?8mW, which may exceed 5% of
2. NEW INTEGRATED
The proposed integrated scan-retention mechanism is based on a
prior art low-power overhead level-sensitive scan mechanism ,
shown in Fig. 2. The master latch in Fig. 2 can be any type of a sin-
gle phase latch, or a two-phase latch, for example, edge-triggered
latch, pulsed latch [8, 10], or dual edge triggered flip-flop [5, 3].
The scan latch is a low-area slow level-sensitive latch, controlled
by clock B. The output of the scan latch is the scan output of the
entire flip-flop. It is connected to the scan input of another latch in
the scan chain. During normal operation mode, clock A and clock
B are kept at the low level, and the flip-flop works as a conventional
latch, whereas scan latch is in the non-transparent state, so that the
scan output does not toggle, and theinternal capacitances inside the
scan latch do not toggle either. This reduces the power dissipation
in the normal operation mode. During the scan mode, clock C is
kept at the low level, and the flip-flop works as a master-slave latch,
controlled by non-overlapping clocks A and B, providing a robust,
level-sensitive scan operation.
run run scan data in scan data out
Figure 2: Prior art low power scan mechanism.
Fig. 3 and 6b show implementation examples of the above scan
mechanism, applied to some of the recently published latches [8,
10, 5, 3]. For abutted latches in custom datapaths scan outputs SO
and SO b of a latch are connected to scan inputs SI and SIb of an
adjacent latch. For distant scanconnections asingle-rail connection
is used, and input SI is locally inverted. Such a connection scheme
reduces the transistor area overhead of the scan mechanism without
incurring significant routing overhead.
The power overhead of this scan mechanism is reduced to the
gate and drain capacitance of two minimum-sized transistors, con-
nected to the output nodes plus some wiring overhead. This extra
capacitance is charged or discharged at most once per clock cycle,
and is not affected by spurious transitions at the data input.
Fig. 4 shows the proposed extension to the above scan mech-
anism to provide the low-overhead data retention capability. The
new flip-flop with retention uses the scan latch as a low-leakage
storage for retaining data during the power-down mode, and pro-
vides an extra path for restoring the data from the retention latch to
the main flip-flop. The retention latch is built of low-leakage de-
vices, such as high threshold transistors, or regular transistors with
the back bias capability. If gate leakage is an issue, transistors in
the retention latch can be implemented as thick gate oxide devices.
Real ground and Vdd are used as power terminals in the retention
latch. The rest of the flipflop is built of fast low threshold, thin gate
oxide transistors, and it may use either virtual Vdd with a header,
or virtual ground with a footer, to cut the leakage path during the
During the normal operation mode clocks A and B are kept at the
low level, and the latch operates as the conventional latch. During
Figure 3: Scannable latches: a - ep-SFF; b - SSASPL; c - ep-
DSFF; d - DPSCRFF.
the scan mode the RESTORE signal is kept at the low level, and
the latch work as a master-slave latch, controlled by clocks A and
B, as described earlier. When entering the sleep mode, high level at
clock B saves data in the retention latch, Fig. 4. On returning from
the sleep mode, high level is applied to the RESTORE signal, and
high level at clock A restores data from the retention latch to the
Fig. 5 and 6d show examples of implementing the proposed data
retention mechanism in the scannable HLFF and sense amplifier
latches. The path for restoring data from the retention latch to the
main latch is implemented as a stack of NFETs N3 or N7 and N4.
The proposed scan-retention mechanism can be applied to a variety
of latches [1, 4, 8, 9], including those in Fig. 3.
The additional power and delay overhead of the retention mech-
anism over the scan mechanism is reduced to a minor increase in
capacitances of internal wires, due to some increase in the area of
the flip flop. No extra capacitance of transistor gates, sources or
drains is added to any nodes that are switching during the normal
operation mode. This feature makes the proposed retention mecha-
nism particularly attractive for low-power applications, where min-
imizing both active and standby power is important
3. ANALYSIS OF THE OVERHEAD OF
To determine the area, delay and power overheads of the pro-
posed dataretentionmechanism wedeveloped thelayout in0.13um
technology for the four versions of the sense amplifier latch [6, 13]:
non-scannable latch without data retention, Fig. 6a, scannable latch
SCAN / RETENTION
Figure 4: Scannable latch with data retention.
Figure 5: Scannable HLFF latch with data retention.
without data retention, Fig. 6b, non-scannable latch with data re-
tention, Fig. 6c, and scannable latch with data retention, Fig. 6d.
The layout for the non-scannable latch without retention fits into 9
tracks, Fig. 7, while the layouts for the scannable latch, and latch
with data retention were designed to fit into 12 tracks, Fig. 8 and 9.
For the design in Fig. 9, the retention latch is built out of regular
transistors, placed in separate wells for the back biasing capability.
Thisdesign choice leadstosomewhat higher area overhead because
of the minimal spacing requirement between wells biased to dif-
ferent potentials. Also, there is an additional area overhead due to
well contactsinthe retentionlatch, whichcan beshared by adjacent
latches if they are flipped appropriately. The area overhead for the
retention latch that uses high threshold devices issmaller by at least
one track in width, but the manufacturing cost is higher. Table 1
gives areas for the four latches in Fig. 6. Although the scannable
latch with data retention has four transistors more than the non-
scannable latch with data retention, they have the same area, be-
cause the height is determined by the height of the retention latch,
and the width cannot be reduced because of the minimal well sep-
aration ground rule. The scannable latch without data retention has
a 2 tracks smaller width than the one with data retention because
wells of the transistors in the master and scan/retention latches do
not need to be separated.
To determine the exact amount of the power and performance
overhead of the scan and data retention mechanisms we developed
the layout for multi-bit datapath registers with scan chain and lo-
Figure 6: Sense amplifier latch: a - non-scannable latch; b -
scannable latch; c - non-scannable latch with data retention; d
- scannable latch with data retention.
cal clock distribution network, Fig. 10, and ran simulations on the
extracted netlists, according to the methodology described in .
Table 1 summarizes results of the simulations.
size inverters and wiring capacitance. The additional overhead of
the data retention feature over the scan mechanism is very small
(no more than 1%), and so is the additional overhead of the scan
feature over the data retention mechanism. For the implemented
designs the increase in delay compared to the non-scannable latch
is 15% because very small load capacitances were used in simula-
tions, typical of ultra low power designs, and latch transistors were
tuned accordingly. The delay overhead is much smaller in high-
performance designs, where transistor sizes are tuned for smaller
Figure 7: Non-scannable SA latch without data retention,
Figure 8: Scannable SA latch without data retention. Fig. 6b.
Figure9: Scannablelatch SA latch with data retention. Fig. 6d.
Thepower of thedeveloped latcheswasmeasuredusingthemethod-
ology in[12, 13, 9]. ThedatainTable1correspond totheswitching
local clock distribution was included into the latch power measure-
ments, and so was the capacitances of metal wires to get from the
latch boundary to the data input pin and from the data output pin to
the other boundary. A 9-track cell height design was assumed for
the non-scannable latch without retention, whereas a 12-track cell
height design was used for measuring the power of the other three
latches, which resulted in somewhat lower power numbers for the
non-scannable latch without retention. If the same bitstep is used
for all latches, the power overhead of the scan/retention mechanism
is only 3%. The power overhead of the scan/retention mechanism
is 3 times smaller than the delay overhead, because the introduced
capacitance switches only when new data is latched, which was as-
sumed to happen on the average once every 3.33 cycles (α
As discussed earlier, the power overhead is even smaller in designs
tuned for higher performance.
? 0 ?3 and the glitching factor β
? 0 ?16. The power of the
? 0 ?3).
Figure 10: 16-bit data register (not all layers are shown).
Table 1: Area, delay and average energy per cycle of SA latches
with and without scan and data retention mechanisms (Vdd =
? scan 40.32
? scan 44.16
A methodology for unifying the scan and data retention mech-
anismsin latches was presented which leads to scannable latches
with the data retention capability achieved at a very low power
overhead during the active mode. The exact amount of the power
and performance and area overhead was measured using netlists
extracted from the layouts built in a state of the art 0.13um technol-
ogy. The additional overhead of the data retention feature over the
scan mechanism is very small, and so is the additional overhead of
the scan feature over the data retention mechanism. The proposed
integrated scan-retention mechanism achieves both features at the
cost of one.
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