Article

Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories.

IEICE Transactions 01/2010; 93-C:317-323. DOI: 10.1587/transele.E93.C.317
Source: DBLP

ABSTRACT Two essential technologies for a 3D Solid State Drive (3D-SSD) with a
boost converter are presented in this paper. The first topic is the
spiral inductor design which determines the performance of the boost
converter, and the second is the effect of TSV's on the boost converter.
These techniques are very important in achieving a 3D-SSD with a boost
converter. In the design of the inductor, the on-board inductor from
250nH to 320nH is the best design feature that meets all requirements,
including high output voltage above 20V, fast rise time, low energy
consumption, and area smaller than 25mm2. The use of a boost
converter with the proposed inductor leads to a reduction of the energy
consumption during the write operation of the proposed 1.8-V 3D-SSD by
68% compared with the conventional 3.3-V 3D-SSD with the charge pump.
The feasibility of 3D-SSD's with Through Silicon Vias (TSV's)
connections is also discussed. In order to maintain the advantages of
the boost converter over the charge pump, the reduction of the parasitic
resistance of TSV's is very important.

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    ABSTRACT: A 3-D solid-state drive system with through-silicon via (TSV) technology and boost converter is presented in this paper. The proposed boost converter enables the supply voltage reduction to 1.8 V and smaller NAND Flash memory chips. From the simulation results, the conventional bonding-wire technology can achieve only eight NAND chip integrations not only due to their structural problem but also due to the performance degradation. On the other hand, 128 NAND Flash memory chips can be integrated into a package with full-copper TSVs and the proposed system has about 1.70 μs of rise time for 20 V, 74.2 nJ of the energy dissipation, and 225 μm<sup>2</sup> of additional Si area consumption for a NAND chip. Even if poly-Si TSVs are used, because of the process restriction, 64 NAND chips can be stacked with about 34% longer rise time and 22% degradation of energy dissipation compared to a full-copper TSV by grinding the Si-substrate to 10 μm .
    IEEE Transactions on Components, Packaging, and Manufacturing Technology 03/2011; · 1.26 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: Two essential technologies for a 3D Solid State Drive (3D-SSD) with a boost converter are presented in this paper. The first topic is the spiral inductor design which determines the performance of the boost converter, and the second is the effect of TSV's on the boost converter. These techniques are very important in achieving a 3D-SSD with a boost converter. In the design of the inductor, the on-board inductor from 250nH to 320nH is the best design feature that meets all requirements, including high output voltage above 20V, fast rise time, low energy consumption, and area smaller than 25mm2. The use of a boost converter with the proposed inductor leads to a reduction of the energy consumption during the write operation of the proposed 1.8-V 3D-SSD by 68% compared with the conventional 3.3-V 3D-SSD with the charge pump. The feasibility of 3D-SSD's with Through Silicon Vias (TSV's) connections is also discussed. In order to maintain the advantages of the boost converter over the charge pump, the reduction of the parasitic resistance of TSV's is very important.
    IEICE Transactions. 01/2010; 93-C:317-323.

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