Article

A Sampling Switch Design Procedure for Active Matrix Liquid Crystal Displays.

IEICE Transactions 01/2006; 89-A:3538-3545. pp.3538-3545
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  • Article: Peripheral circuit integrated poly-Si TFT LCD with gray scale representation
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    ABSTRACT: A 3.3-in.-diagonal fully integrated low-temperature (<600°C) processed polycrystalline silicon (poly-Si) thin-film transistor (TFT) liquid-crystal display (LCD) with four gray scale (64 colors) representation fabricated on glass is discussed. A contrast ratio in excess of 25 was obtained. The integrated data drive circuits consisted of divided matrix switches, line memories, and multilevel selectors. High-frequency driving capability was achieved by using divided matrix switches with small line memory capacitances. Four gray scale voltages were generated by the multilevel selectors. Integrated scan drive circuits consisted of shift registers, level shifters, ratioless buffers, and multiplexers. High-speed operation and low power consumption were realized by using ratioless buffers. The use of integrating peripheral drive circuits in the prototype display with (132×3)×133 pixels reduced the number of external connections from 531 to 101. The maximum scan and data frequencies were 100 kHz and 10 MHz, respectively. These integrated peripheral circuits should be capable of driving a large display with (640×3)×400 dots at a frame frequency of 60 Hz
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  • Conference Proceeding: Integrating electronics into active matrix liquid crystal displays
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    ABSTRACT: Active matrix liquid crystal displays (AMLCDs) incorporate a nonlinear device at each pixel site to produce a display that exhibits superior viewing characteristics. Transistors and diodes are the nonlinear elements most commonly used and fabrication is accomplished with a variety of technologies. The very existence of transistors in the pixel array prompts the question: can additional electronics be economically integrated into the display? The intuitive answer, based on batch processing considerations, is yes, with confirmation to be found in the realm of available products and development results. This paper briefly reviews specific advantages of including electronics in a display. A more in-depth discussion then follows describing functions to integrate and stressing issues that arise when implementing circuits with display-quality transistors
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    Article: Polysilicon TFT circuit design and performance
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    ABSTRACT: Both n- and p-channel polysilicon TFTs can be fabricated, allowing CMOS circuit techniques to be used. However, TFT characteristics are poor in comparison to conventional single-crystal MOSFETs, and relatively coarse design rules must be used to be compatible with processing on large-area glass plates. The authors examine these issues and describe the performance of a range of digital and analog circuit elements built using polysilicon TFTs. Digital circuit speeds in excess of 20 MHz are reported, along with operational amplifiers with over 80 dB of gain and more than 1-MHz unity-gain frequency. Several polysilicon TFT switched-capacitor circuits are also reported and shown to have adequate linearity, output swing, and settling time to form integrated data line drivers on an active-matrix liquid crystal display
    IEEE Journal of Solid-State Circuits 01/1993; · 3.23 Impact Factor

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