Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaic: present status and current developments

Progress in Photovoltaics Research and Applications (Impact Factor: 7.71). 09/2010; 18(6):411–433. DOI:10.1002/pip.955
Source: OAI

ABSTRACT The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se2, CuInS2, or Cu(In,Ga)(S,Se)2. The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1 − xMgxO.

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