Multibandgap quantum well wafers by IR laser quantum well intermixing : simulation of the lateral resolution of the process
Journal Article: Journal of Laser Micro/Nanoengineering 01/2006; 1:48-48.
Abstract
Post-growth selective-area bandgap tuning of quantum well (QW) microstructures has been investigated using Finite Element Method computer simulations. Laser fast scanning is proposed as a way to overcome the problem of damaging the surface with a small spot needed to obtain better spatial resolution. Influence of laser parameters, background heating, beam scanning speed and properties of QW microstructures on the ability to achieve sharp bandgap profiles in the laser- written intermixed material are investigated. Lateral resolution of 2 µm is expected to be achievable with a 12-µm beam laser rapid thermal annealing.
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