The Role of Alloying Effects in the Formation of Electronic Structure of Unordered Group III Nitride Solid Solutions
Journal Article: Semiconductors 01/2004; 38:316-321.
Abstract
The effect of compositional and positional disorder on electronic properties of (Group III)-nitride solid solutions with the wurtzite structure was studied by the method of a model empirical pseudopotential using 32-atom supercells. The calculated values of the band-gap bowing parameter are found to be equal to 0.44, 2.72, and 4.16 for AlGaN, InGaN, InAlN, respectively. It is shown that the major contribution to the band-gap bowing parameter is made by the compositional disorder, whereas the bond-length relaxation reduces the effect of com- positional disorder and the effects of the volume deformation.
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