Capacitance of gated GaAs/ Al x Ga 1 − x As heterostructures subject to in-plane magnetic fields

Physical review. B, Condensed matter (Impact Factor: 3.66). 05/1995; 51(15):10181-10184. DOI: 10.1103/PhysRevB.51.10181
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A detailed analysis of the capacitance of gated GaAs/AlxGa1-xAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher two-dimensional gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.

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Available from: Ludvik Smrcka,
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    • "where L is the thickness of the AlGaAs-layer, i is the dielectric constant of the layer and K is a constant that takes into account fixed charges in the AlGaAs. Differentiating Eq.(12) with respect to n e , one obtain the total inverse magneto-capacitance per unit area C(B) at a given temperature T [28] [29] "
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