Capacitance of gated GaAs/AlxGa1-xAs heterostructures subject to in-plane magnetic fields.

Physical review. B, Condensed matter (Impact Factor: 3.77). 05/1995; 51(15):10181-10184. DOI: 10.1103/PhysRevB.51.10181
Source: PubMed

ABSTRACT A detailed analysis of the capacitance of gated GaAs/AlxGa1-xAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher two-dimensional gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.

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