Siegfried Selberherr

Publications (595) View all

• Source

  Available from: tuwien.ac.at

  Article: Consistent Comparison of Tunneling Models for Device Simulation

  A Gehring, H Kosina, T Grasser, S Selberherr
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  ABSTRACT: We present a survey of tunneling models describing car-rier transport through insulating layers for semiconduc-tor device simulation. Based on Tsu-Esaki's equation we separately discuss models for the energy distribu-tion function and the transmission coefficient. We use a generalized non-Maxwellian distribution function to account for hot carrier tunneling. We show how to correctly calculate the transmission coefficient of en-ergy barriers when the transfer-matrix methods fail and compare the models to commonly used compact models.
  05/2013;
• Source

  Available from: Siegfried Selberherr

  Article: On-Resistance in the ALDMOST

  G. Nanz, P. Dickinger, W. KAUSEL, S. Selberherr
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  ABSTRACT: Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the oxide thickness and the additional semi-insulating layer along the surface of the gate oxide above the drift region. This layer has been introduced in order to lower the high ON-resistance which is in general a disadvantage of this type of MOS transistors.
  Le Journal de Physique Colloques 05/2013;
• Article: 3D MOSFET Device Effects due to Field Oxide

  M. Thurner, S. Selberherr
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  ABSTRACT: This paper presents 3D effects of MOSFET's due to the nonplanar nature of the field-oxide body. The investigations have been carried out by MINIMOS 5 our fully three-dimensional simulation program. Three-dimensional effects like threshold shift for small channel devices, channel narrowing and the enhanced conductivity at the channel edge have been successfully modeled.
  Le Journal de Physique Colloques 05/2013;
• Article: Implications of Dopant-Dependent Low-Field Mobility and Band Gap Narrowing on the Bipolar Device Performance

  V. Palankovski, G. Kaiblinger-Grujin, S. Selberherr
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  ABSTRACT: Band gap narrowing is one of the crucial heavy-doping effects to be considered for bipolar devices. We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. As the minority carrier mobility is of considerable importance for modeling advanced n-p-n bipolar transistors, we implemented the new universal low field mobility model [l] in MINIMOS-NT [2]. This model distinguishes between majority and minority electron mobilities on one hand, and between different dopant species on the other hand, both as a function of temperature and dopant concentration. This unified treatment is especially useful for accurate device simulation. As a particular example we present the results for SiGe HBT
  Journal de Physique IV (Proceedings) 05/2013; · 0.29 Impact Factor
• Source

  Available from: tuwien.ac.at

  Article: An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects

  T Grasser, H Kosina, S Selberherr
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  ABSTRACT: Accurate modeling of impact-ionization is a critical issue for submicron devices. It is well known that models based on the electric field or on the average carrier energy give a rather poor description of the problem. We show that by accounting for the average square energy an accurate analytical description of the distribution function can be given which can then be used to evaluate microscopic models in a macroscopic device simulator. The new model is accurate for both bulk and submicron devices and involves only local quantities.
  05/2013;