Topics (27) View all

Skills (92)

Research experience

  • Jan 2011–
    May 2012
    Teaching: ENG333: Creativity, Innovation, and Vision
    University of Illinois, Urbana-Champaign
    USA · Urbana
  • Aug 2008–
    present
    Research: University of Illinois, Urbana-Champaign
    University of Illinois, Urbana-Champaign · Department of Electrical and Computer Engineering · Lyding and Pop groups
    USA · Urbana

Education

  • Aug 2008–
    Dec 2009
    University of Illinois at Urbana Champaign
    Electrical and Computer Engineering · MS
    USA · Urbana
  • Aug 2004–
    May 2008
    Valparaiso University
    Computer Engineering · BS
    USA · Valparaiso

Other

  • Languages
    English, Spanish
  • Scientific Memberships
    IEEE, APS, MRS, AVS, IEEE Electron Devices Society
  • Journal Referees
    Nanotechnology
  • Other Interests
    Running, lifting weights, marathon training, bowling, watching college basketball, Nature, Science, Nature Nanotechnology, Nature Materials, Nano Letters, ACS Nano, Nature Physics, Nature Chemistry, Applied Physics Letters, Physical Review Letters

Questions and Answers (4) View all

  • Answer added in Graphene
    2 Dissolving of PMMA layer
    By Subrata Ghosh · Indira Gandhi Centre for Atomic Research
    Joshua Wood · University of Illinois, Urbana-Champaign
    Strong solvents help. Using dichloromethane works better than acetone, and chloroform works better than dichloromethane. However, there is no way to f... [more]
  • Answer added in Raman Scattering
    10 What is the source of a 1400 cm-1 Raman shift of a typical microscopy slide when the laser 785 nm is used?
    By Mikhail Berezin · Washington University in St. Louis
    Joshua Wood · University of Illinois, Urbana-Champaign
    Typically the Si from the glass in the slide; there is a combinational phonon mode around ~1400 cm-1. 
  • Question asked in Graphene
    6 What is the best way to clean graphene post transfer to an arbitrary substrate?
    Currently, graphene has to be removed from its growth substrate to an insulating surface for most applications. This transfer requires the introductio... [more]
    By Joshua Wood · University of Illinois, Urbana-Champaign
  • Answer added in Carbon Nanotubes
    20 How to disperse CNTs? And in which solvent?
    By Javid Ali · Jamia Millia Islamia
    Joshua Wood · University of Illinois, Urbana-Champaign
    Your best bet is to use n-methylpyrrolidone, as it has a high solvation energy with CNTs. It has also been used to chemically exfoliate graphene from ... [more]

Publications (14) View all

  • Source
    Article: InxGa1-xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation.
    Parsian K Mohseni, Ashkan Behnam, Joshua D Wood, Christopher D English, Joseph W Lyding, Eric Pop, Xiuling Li
    [show abstract] [hide abstract]
    ABSTRACT: The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs NWs on graphene results in spontaneous phase separation starting from the beginning of growth, yielding a well-defined InAs-InxGa1-xAs (0.2 < x < 1) core-shell structure. The core-shell structure then terminates abruptly after about 2 μm in height, and axial growth of uniform composition InxGa1-xAs takes place without a change in the NW diameter. The InxGa1-xAs shell composition changes as a function of indium flow, but the core and shell thicknesses and the onset of nonsegregated InxGa1-xAs axial segment are independent of indium composition. In contrast, no InGaAs phase segregation has been observed when growing on MoS2, another two-dimensional (2D) layered material, or via the Au-assisted vapor-liquid-solid (VLS) mechanism on graphene. This spontaneous phase segregation phenomenon is elucidated as a special case of van der Waals epitaxy on 2D sheets. Considering the near lattice matched registry between InAs and graphene, InGaAs is forced to self-organize into InAs core and InGaAs shell segments since the lack of dangling bonds on graphene does not allow strain sharing through elastic deformation between InGaAs and graphene.
    Nano Letters 02/2013; · 13.20 Impact Factor
  • Source
    Article: Atomic-Scale Evidence for Potential Barriers and Strong Carrier Scattering at Graphene Grain Boundaries: a Scanning Tunneling Microscopy Study.
    Justin C Koepke, Joshua D Wood, David Estrada, Zhun-Yong Ong, Kevin T He, Eric Pop, Joseph W Lyding
    [show abstract] [hide abstract]
    ABSTRACT: We use scanning tunneling microscopy and spectroscopy to examine the electronic nature of grain boundaries (GBs) in polycrystalline graphene grown by chemical vapor deposition (CVD) on Cu foil and transferred to SiO(2) substrates. We find no preferential orientation angle between grains, and the GBs are continuous across graphene wrinkles and SiO(2) topography. Scanning tunneling spectroscopy shows enhanced empty states tunneling conductance for most of the GBs and a shift towards more n-type behavior compared to the bulk of the graphene. We also observe standing wave patterns adjacent to GBs propagating in a zigzag direction with a decay length of ~1 nm. Fourier analysis of these patterns indicates that backscattering and intervalley scattering are the dominant mechanisms responsible for the mobility reduction in the presence of GBs in CVD-grown graphene.
    ACS Nano 12/2012; · 10.77 Impact Factor
  • Source
    Patent: Scalable Grain Tank Fill Level Display
    Kirk J. Chervenka, Barton J. Stevens, Joshua D. Wood, Tyler D. Schleicher
    [show abstract] [hide abstract]
    ABSTRACT: An apparatus for indicating a grain tank fill level for a grain tank (20) of an agricultural harvester (10) comprises a display (48), a calculating means (46) and an operator input device (70) for selecting between first and second modes of operation. The calculating means (46) is configured to repetitively and automatically calculate the fill level of the grain tank (20) in a first mode of operation and to repetitively and automatically indicate a scaled fill level that is scaled to a reference fill level different from the actual fill level in a second mode of operation. The operator input device (70) is configured to indicate to the calculating means (46) the reference fill level when the operator input device (70) is selected by the operator.
    Ref. No: 7,877,181, Year: 01/2011
  • Source
    Article: Matrix multiplication using quantum-dot cellular automata to implement conventional microelectronics
    Joshua D. Wood, P. Douglas Tougaw
    [show abstract] [hide abstract]
    ABSTRACT: Quantum-dot cellular automata (QCA) shows promise as a post silicon CMOS, low power computational technology. Nevertheless, to generalize QCA for next-generation digital devices, the ability to implement conventional programmable circuits based on NOR, AND, and OR gates is necessary. To this end, we devise a new QCA structure, the QCA matrix multiplier (MM), employing the standard Coulomb blocked, five quantum dot (QD) QCA cell and quasi-adiabatic switching for sequential data latching in the QCA cells. Our structure can multiply two N x M matrices, using one input and one bidirectional input/output data line. The calculation is highly parallelizable, and it is possible to achieve reduced calculation time in exchange for increasing numbers of parallel matrix multiplier units. We show convergent, ab initio simulation results using the Intercellular Hartree Approximation for one, three, and nine matrix multiplier units. The structure can generally implement any programmable logic array (PLA) or any matrix multiplication based operation.
    06/2010;
  • Book: Single-walled carbon nanotube alignment and placement by mechanical meniscus action
    J. Wood
    01/2009; University of Illinois at Urbana-Champaign.

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