Francesco Driussi has
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Article: Effects of Thermal Treatments on the Trapping Properties of HfO2 Films for Charge Trap Memories
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Article: Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations
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Article: Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling
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