Bingjie Jiang

Durham University | DU · Business and Innovation Services "DBIS"

Long recognized as the best potential solution to the continued scaling of the onetransistor/one-capacitor standalone dynamic random access memory (DRAM) beyond a gigabit, barium strontium titanate (BST) and other high permittivity dielectrics are fast becoming enablers to embedding large amounts of memory into a high performance logic process. Sys...

Ferroelectric non-volatile memories (FENVM) are fabricated using spin-coat and fire deposition of the SrBi2Ta2O9 layered perovskite ferroelectric. Test memories using a 2 transistor-2 capacitor bit cell, top contacts to capacitors and single level metal were fabricated. We report here on the integration and electrical characteristics of fully funct...

Effects of processing parameters and thickness on the properties of spin-on SrBi₂Ta₂O₇ (SET) films were investigated. Film crystallinity was improved with heat treatment but surface roughness also increased significantly above 400°C. Capacitor polarization was found to be a function of electric field, based on the r...

Summary form only given. We discuss different integration approaches, their challenges, and problems specific to the integration of ferroelectric materials into Si-CMOS. The focus is on our ongoing integration efforts using a 1 K test vehicle with 2T/2C memory architectures in single level poly and single level metal with a 0.8 μm front-end and a 1...

Ferroelectric SiBi2Ta2O9 capacitors with Pt electrodes were measured to have a non-volatile polarization of 6.6 μC/cm using 3 V pulse polarization measurements, a leakage current of less than 3×10 A/cm at 3 V, and a breakdown of voltage greater than 20 V. The temperature dependence of hysteresis loops were measured to 200 °C and both the non-volati...

This letter addresses the temperature dependence of some of the electrical properties of 0.2-μm-thick SrBi2Ta2O9 capacitors with platinum electrodes on silicon wafers for nonvolatile memory applications. Investigations of the remanent polarization, the nonvolatile polarization and the coercive field with pulse amplitude were made at different tempe...

Several metal oxide perovskites and Bi layered perovskites are of substantial interest for integrated circuit memories. Strontium titanate, barium strontium titanate, and lead zirconate titanate based paraelectrics are of particular interest for dynamic memory applications since they have high charge storage densities, low leakage currents, and res...

A new technique has been developed for the characterization of dielectric voltage- and charge-decay times (T/sub V/ and T/sub Q/) in sol-gel derived ferroelectric films under open-circuit conditions. Voltage decay potentially poses a limitation on the maximum allowable refresh-time in the DRAM capacitor. This direct measurement of T/sub V/ is prefe...