Abdulrhman M. S. Ahmed

Dr.-Ing

Research skills

  • Technical
    Power amplifier design, Characterization, modeling and linearisation using digital Predistorter., Large signal nonlinear measurement, RF/Analog/Microwave board & circuit design and power amplifier design. From CAD and programming point of view, I have experience using different software tools such as ADS (Advanced Design System, Agilent VEE, AWR Microwave Office, CST microwave studio, Printed circuit board design within CR-5000, MATLAB and programming the instruments.

Research experience

  • Teaching: High Linear and Efficiency Amplifier Design up to 2.2 GHz. Amplifier Linearisation Techniques like Digital Predistorter. Design of Analog Circuits and Microwave Components. Characterization and Optimization of RF Power Devices Using Harmonic Load/Source Pull Strategies. Nonlinear Measurements
  • Teaching: Analysis and Modeling (Dynamic AM/AM
  • Teaching: AM/PM
  • Teaching: Imps
  • Teaching: Memory Effects
  • Teaching: ACPR). Working with Simulation Tolls like Agilent ADS
  • Teaching: AWR Microwave Office
  • Teaching: CST Microwave Studio
  • Teaching: Agilent VEE pro and MATLAB. Supervision of Several Final Year Student Master Thesis
  • Teaching: Project Works & Seminars. Development and Verification of a Novel Approach for Nonlinearity and Memory Effects Measurements in Power Amplifiers. Nonlinearity Investigation in GaAs
  • Teaching: LDMOS and GaN Power Devices. Developing and Verification of a Novel Amplifier Behavioural Models. Teaching and Practical Training in Microwave Integrated Circuits. European and National Projects Leading / Subleading.
  • Oct 2003–
    Apr 2005
    Research: High Power Measurement Technique for Characterization and Modeling of GaN Power Device and Power Amplifier with Memory Effects.
    University of Kassel · High Frequency & Microwave Engineering · University of Kassel
    BMBF (German Ministry of Research and Technology) in Consortium with IAF (Fraunhofer Institute), FBH (Ferdinand-Braun Institute), Alcatel, and Lucent. Research Program on GaN Electronics · Kassel
    The Aim of the Project was the Development of a High Power Measurement Techniques for the Characterization and Modeling of GaN Power Devices and Power Amplifiers with Special Focus on Memory Effects.
  • May 2002–
    Apr 2006
    Research: TARGET
    High Frequency & Microwave Engineering
    Top Amplifier Research Groups in a European Team · Kassel
    The Aim of the Project was: Investigation of Measurement Concepts for the Device Characterization Using Frequency- and Time- Domain Techniques (Dynamic Measurements of AM/AM and AM/PM Characteristics Using Multi-tone or Digitally Modulated Signals); Multi-bias Measurement of Active Power Devices; Development of Different Amplifier Behavioural Modeling Techniques Including Memory Effects.
  • Mar 2002–
    May 2003
    Research: Linearisation of Power Amplifier Used in Mobile Application
    University of Kassel · High Frequency & Microwave Engineering · University of Kassel
    University of Kassel · Kassel
    The Aim of the Project was the Development and Verification of Digital Predistortion Linearisation for Basestation Power Amplifiers Used in Universal Mobile Telecommunications System (UMTS).

Education

  • Jan 2000–
    Mar 2005
    Kassel University
    RF & microwave engineering · Dr.-Ing
    Germany · Kassel

Other

  • Languages
    Arabic
    English
    German
    Russian
  • Other Interests
    [01] A. Ahmed and G. Kompa: Digital Predistortion Linearization Using Advanced Design System and MATLAB Simultaneously. 11th Conference on Microwaves, Radio Communication and Electromagnetic Compatibility (MIOP), Germany, May 2001, pp. 79 -82.
    [02] A. Ahmed, M. Endalkachew, and G. Kompa: Power Amplifier Linearization Using Memory Polynomial Predistorters with Non-uniform Delay Taps. IEEE MTT-S Int. Microwave Symp. Dig. , TX, USA, June 2004, pp. 1871-1874.
    [03] A. Ahmed, M. O. Abdalla, E. S. Mengistu, and G. Kompa: Power Amplifier Modeling Using Memory Polynomial with Non-uniform Delay Taps. IEEE 34th European Microwave Conf. Proc., Amsterdam, Oct. 2004, pp. 1457-1460.
    [04] A. Ahmed, B. Bunz, M. Gamal-El Din, and G. Kompa: Measurement Set-ups for Memory Effects Characterization in GaN HEMT Power Device. Top Amplifier Research Groups in a European Team (TARGET) Tutorial on Device Characterisation, Amsterdam, October 2004.
    [05] A. Ahmed and G. Kompa: PAs in Combined Systems and T/R Modules, System Perspective: PA Characterization and Modelling Approaches. Top Amplifier Research Groups in a European Team (TARGET) Tutorial on Power Amplifier Design, Rome, November 2004.
    [06] A. Ahmed, E. R. Srinidhi, and G. Kompa: Efficient PA Modeling Using Neural Network and Measurement Set-up for Memory Effect Characterization in the Power Device. IEEE MTT-S Int. Microwave Symp. Dig. , CA, USA, June 2005.
    [07] A. Ahmed, E. R. Srinidhi, and G. Kompa: Comparison Between Memory Polynomial and Neural Network Models for PA Modeling. Top Amplifier Research Groups in a European Team (TARGET) Workshop on RF Power Amplifier, Italy, April 2005.
    [08] A. Ahmed, E. R. Srinidhi, and G. Kompa: Envelope Frequency Dependent TDNN Power Amplifier Model. Top Amplifier Research Groups in a European Team (TARGET) Tutorial on Transmitter Design, Athens, September 2005.
    [09] A. Ahmed, E. R. Srinidhi, and G. Kompa: Power Amplifier Behavioral Modeling Strategies Using Neural Network and Memory Polynomial Models. Microwave Review Journal- Vol. 12, No.1, June 2006, pp. 15-20.
    [10] A. Ahmed, E. R. Srinidhi, and G. Kompa: Neural Network and Memory Polynomial Methodologies for PA Modeling. 7th International Conf. On Telecommunications in Modern Satellite (TELSIKS05), pp. 393-396, Serbia, September 2005.
    [11] A. Ahmed: Analysis, Modelling and Linearization of Nonlinearity and Memory Effects in Power Amplifiers Used for Microwave and Mobile Communications. PhD. Dissertation, ISBN 3-89958-146-6, University of Kassel, June 2005.
    [12] B. Bunz, Ahmed Abdulrhman, G. Kompa: Influence of Envelope Impedance Termination on RF Behaviour of GaN HEMT. 35th European Microwave Conf. Proc., pp. 1595-1598, Paris, October 2005.
    [13] A. Ahmed, B. Bunz, E. R. Srinidhi, and G. Kompa: Effect of the Short Envelope Termination on the Measured Memory Effect in GaN HEMT Power Device. IEEE Topical Workshop on Power Amplifiers for Wireless Communications. CA, USA, January 2006.
    [14] A. Ahmed, B. Bunz, E. R. Srinidhi, and G. Kompa: Measurements of Envelope Frequency Dependent Nonlinearity in GaN HEMT Power Device. International Nonlinear Microwave and Millimeter-wave Integrated Circuits (INMmiC) Workshop. Aveiro, Portugal, Jan. 2006.
    [15] B. Bunz, A. Z.Markos, A. Ahmed, G. Kompa: Linearisation of high PA with optimised zone 0 terminations. German Microwave Conference, Germany, March 2006.
    [16] Ahmed, A: Satellite Systems of Aircraft Navigation & Landing. National Aviation University of Ukraine, February 1997.

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