IEEE Transactions on Nanotechnology (IEEE T NANOTECHNOL)

Publisher: Institute of Electrical and Electronics Engineers, Institute of Electrical and Electronics Engineers

Journal description

Current impact factor: 1.62

Impact Factor Rankings

2015 Impact Factor Available summer 2015
2013 / 2014 Impact Factor 1.619
2012 Impact Factor 1.8
2011 Impact Factor 2.292
2010 Impact Factor 1.864
2009 Impact Factor 1.671
2008 Impact Factor 2.154
2007 Impact Factor 2.11
2006 Impact Factor 1.909
2005 Impact Factor 2.112
2004 Impact Factor 3.176
2003 Impact Factor 2.088

Impact factor over time

Impact factor
Year

Additional details

5-year impact 1.92
Cited half-life 4.50
Immediacy index 0.45
Eigenfactor 0.01
Article influence 0.74
Website IEEE Transactions on Nanotechnology website
Other titles IEEE nanotechnology magazine, Nanotechnology magazine
ISSN 1941-0085
OCLC 70259884
Material type Periodical, Internet resource
Document type Journal / Magazine / Newspaper, Internet Resource

Publisher details

Institute of Electrical and Electronics Engineers

  • Pre-print
    • Author can archive a pre-print version
  • Post-print
    • Author can archive a post-print version
  • Conditions
    • Author's pre-print on Author's personal website, employers website or publicly accessible server
    • Author's post-print on Author's server or Institutional server
    • Author's pre-print must be removed upon publication of final version and replaced with either full citation to IEEE work with a Digital Object Identifier or link to article abstract in IEEE Xplore or replaced with Authors post-print
    • Author's pre-print must be accompanied with set-phrase, once submitted to IEEE for publication ("This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible")
    • Author's pre-print must be accompanied with set-phrase, when accepted by IEEE for publication ("(c) 20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.")
    • IEEE must be informed as to the electronic address of the pre-print
    • If funding rules apply authors may post Author's post-print version in funder's designated repository
    • Author's Post-print - Publisher copyright and source must be acknowledged with citation (see above set statement)
    • Author's Post-print - Must link to publisher version with DOI
    • Publisher's version/PDF cannot be used
    • Publisher copyright and source must be acknowledged
  • Classification
    ​ green

Publications in this journal

  • [Show abstract] [Hide abstract]
    ABSTRACT: The use of carbon nanofibers reinforced composites is popular among several industries such as healthcare, aerospace and defense as they have enhanced mechanical and thermal properties. Carbon Nano Fibers (CNF) and Carbon Nano Tubes (CNT) in the composites also improve damping and attenuation. We have been investigating its application for scaffold implants in human airways which undergoes vibratory stress and requires weight-sensitive sound proofing. This paper proposes a predictive model for the attenuation of sound waves through the composite that takes into consideration the Rayleigh scattering function, absorption, resonance and interfacial friction of the embedded fibers. These factors are dependent on the size, thickness, density, porosity, Young Modulus and volume fraction of the nanofibers or nanotubes. Carbon Nano Fibers Reinforced PDMS (CNFRP) and Single Walled Carbon Nano Tubes Reinforced Poly-di-methylsiloxane (SWCNTRP) composites were investigated. Ultrasonic testing and measurement of sound wave attenuations through the material were done to validate the proposed model and results are shown to be consistent.
    IEEE Transactions on Nanotechnology 01/2015; DOI:10.1109/TNANO.2015.2396536
  • [Show abstract] [Hide abstract]
    ABSTRACT: A simple and efficient technique allows the direct application of a mixture of zeolite 3A and castor oil onto surfaces, at low temperatures. This same technique can also be used to fabricate iono-electronic devices on silicon wafers for biomedical purposes. In this article, we investigate the use of a mixture of zeolite together with different vegetable oils aimed at obtaining thinner, more uniform, repeatable layers at even lower temperatures, which are capable of entrapping biological substances, specifically urea molecules. By choosing the proper mixture, the curing temperature can be optimized to make the process compatible with integrated circuit technology. A cold O2- plasma treatment was used during experimentation to activate the zeolite thin layer on silicon by removing the residual organic species. The absorption of urea molecules and its interaction with the zeolite framework was investigated through Fourier transform infrared spectroscopy.
    IEEE Transactions on Nanotechnology 12/2014; 14(2). DOI:10.1109/TNANO.2014.2378892
  • [Show abstract] [Hide abstract]
    ABSTRACT: Reconfigurable nanowire transistors are multifunctional switches that fuse the electrical characteristics of unipolar n- and p-type field effect transistors (FETs) into a single universal type of four-terminal device. In addition to the three known FET electrodes the fourth acts as an electric select signal that dynamically programs the desired polarity. The transistor consists of two independent charge carrier injection valves as realized by two gated Schottky junctions integrated within an intrinsic silicon nanowire. The transport properties that provide unipolar n- and p-type behavior will be elucidated. Further, solutions to the major device challenges toward the implementation of these novel transistors at the circuit level are proposed, by exploiting specific nanowire geometries and dimensions. These include methods that deliver equal on-currents and symmetric transfer characteristics for n- and p-type, and that eliminate supra-linear output characteristics at low source-drain biases. We will further show that circuits built of these symmetric transistors successfully exhibit complementary operation. Finally, the prospects in building reconfigurable circuits and systems will be briefly summarized.
    IEEE Transactions on Nanotechnology 11/2014; 13(6):1020. DOI:10.1109/TNANO.2014.2362112
  • [Show abstract] [Hide abstract]
    ABSTRACT: Complementary resistive switching (CRS) memristor is an emerging nonvolatile memory device that features low-sneak path current compared to traditional memristors. Despite its advantages, threshold voltage and doping interface drift speed variations over time are major concerns for CRS memory devices. In this paper, we will demonstrate that these variations can significantly reduce the CRS lifetime reliability in terms of number of memory operations that can be performed. Based on such demonstrations, comprehensive theoretical and empirical studies are carried out using H-Spice based simulations to investigate the impact of biasing and threshold voltages on CRS lifetime reliability. Underpinning these studies, a novel CRS lifetime relationship is proposed and extensively validated through further simulations.
    IEEE Transactions on Nanotechnology 01/2014; 14(1). DOI:10.1109/TNANO.2014.2371928
  • [Show abstract] [Hide abstract]
    ABSTRACT: Semiconducting carbon nanotubes (CNTs) are considered as one of the most promising candidates to replace silicon in future nano-electronics. Single-walled carbon nanotubes (SWNTs) have been used as an active channel material in field-effect transistors (FETs). The nanotube-based circuits show great potential in future electronics and computer technology. Integrating SWNT FETs to form logic gates-the basic units of integrated circuits (ICs)-needs both p- and n-type SWNT FETs. However, without doping, annealing, or other special treatment, the as-obtained SWNT FETs are typically p-type. Here we report a SWNT-based logic device-a logic gate inverter (or a NOT gate)-using simple fabrication methods. The critical components of the inverter including a p-type SWNT FET and an n-type SWNT FET are fabricated using low-cost materials and an easy-to-control solution-based process. The introduction of polyethylenimine (PEI), a polymer with high electron-donating ability, to the device successfully converts the p-type FET to an n-type device. The resulting devices are air-stable outside a vacuum or an inert environment. Electrical characterization of these devices demonstrates that both p-type and n-type FETs produce typical field effects and the resulting logic gate inverter exhibits satisfactory switching characteristics. We believe that the combination of the simple fabrication methods, easy conversion of the transistors, and satisfactory logic gate switching performance can influence fundamental research in nano-materials and practical applications of nano-electronics.
    IEEE Transactions on Nanotechnology 11/2013; 12(6):1111-1117. DOI:10.1109/TNANO.2013.2280537
  • [Show abstract] [Hide abstract]
    ABSTRACT: Local anodic oxidation (LAO) has been performed on highly oriented pyrolytic graphite (HOPG) and few layer graphene (FLG) using contact-mode (CM) atomic force microscopy (AFM) in a controlled humidity chamber. Different types of LAO patterns, namely, protrusion and trench features were observed for different tip speeds under similar conditions of LAO patterning, in both CM and noncontact-mode (NCM) AFM images. Observed LAO patterns show a variation in their dimensions over time. This paper carries out a study performed on the observed changes in dimensions of LAO patterns made on HOPG and FLG over several days, pointing to the dynamics of these LAO patterns. The stability of the LAO patterns on HOPG is compared with that for FLG. LAO patterns on HOPG show a widening and reduction in depth over a day. LAO patterns on FLG show, in contrast, a random variation in the lateral dimension “width” and stabilization in the vertical dimension “depth” over several days.
    IEEE Transactions on Nanotechnology 11/2013; 12(6):1002. DOI:10.1109/TNANO.2013.2274900
  • [Show abstract] [Hide abstract]
    ABSTRACT: Thin TiN coatings were implanted with 100 keV N+ with ion energy at room temperature using a 150-keV accelerator. Implantation was carried out at three different doses: 5 x 10(15) ions/cm(2), 1 x 10(16) ions/cm(2), and 5 x 10(16) ions/cm(2). For the TiN specimen synthesized by reactive sputtering, nitrogen implantation zones were grey. After implantation, films were characterized by atomic force microscopy (AFM) for topography and Glancing Incident XRD(GIXRD) for possible structural alteration. Examination with GIXRD showed surface amorphization and low angle shift due to enhancement in accumulated compressive stress (similar to 3 GPa). AFM images clearly revealed formation of dissipative structures in the form of ripples. Surface roughness increases from 4.5 to 12.5 nm with ion dose. The mechanism contributing to the enhanced mechanical strength of TiN thin films is explained by using observed nanostructural features. This is the purpose of present investigation.
    IEEE Transactions on Nanotechnology 11/2013; 12(6):1007-1011. DOI:10.1109/TNANO.2013.2276409
  • [Show abstract] [Hide abstract]
    ABSTRACT: An amorphous Yb2O3 passivation layer integrated with a crystalline ZrTiO4 film was explored as the advanced gate stack for Ge MOS devices. The ZrTiO4/Yb2O3 gate stack demonstrates D-it of 2.4 x 10(11) cm(-2) . eV(-1) and EOT down to 0.76 nm which are, respectively, due to the formation of an interfacial YbGeOx layer that well passivates the dangling bonds at Ge surface and the adoption of a crystalline ZrTiO4 film with a kappa value of 45.6. The gate stack also shows low leakage current, tight distribution of device parameters, and desirable reliability performance, paving an alternative avenue to develop high-performance Ge MOS devices.
    IEEE Transactions on Nanotechnology 11/2013; 12(6):1018-1021. DOI:10.1109/TNANO.2013.2283252